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FDB3502-VB Product details
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Product Introduction
The FDB3502-VB is a high-performance single N-channel power MOSFET in a TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of 100V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, and it uses Trench technology to achieve low on-resistance and excellent switching performance. The FDB3502-VB has an on-resistance of 100mΩ at a gate voltage of 10V and can handle a drain current (ID) of up to 20A. The design of this MOSFET makes it excel in applications that require medium voltage and current handling.
The FDB3502-VB is a high-performance single N-channel power MOSFET in a TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of 100V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, and it uses Trench technology to achieve low on-resistance and excellent switching performance. The FDB3502-VB has an on-resistance of 100mΩ at a gate voltage of 10V and can handle a drain current (ID) of up to 20A. The design of this MOSFET makes it excel in applications that require medium voltage and current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
FDB3502-VB MOSFET is suitable for the following fields and modules due to its suitable voltage, current handling capability and low on-resistance:
1. **Power switch**: In power switching applications, such as switch mode power supplies (SMPS) and DC-DC converters, FDB3502-VB can effectively switch current, reduce power loss, and improve conversion efficiency, suitable for power management modules in the medium voltage range.
2. **Motor control**: In motor drive systems, including electric vehicles and power tools, FDB3502-VB can withstand moderate voltage and current loads, ensuring the stability and reliability of the motor under normal operation.
3. **Power amplifier**: In power amplifier circuits, the low on-resistance of FDB3502-VB can reduce power loss and improve overall efficiency, suitable for power management of audio systems and communication equipment.
4. **Battery Management System**: In battery management systems, such as battery protection and charging control circuits, FDB3502-VB can provide reliable switch control, suitable for the management of medium voltage battery systems, improving system safety and efficiency.
FDB3502-VB MOSFET is widely used in various medium voltage and medium current electronic devices and systems with its stable performance and excellent current handling capability, providing efficient switching performance and low power operation.
FDB3502-VB MOSFET is suitable for the following fields and modules due to its suitable voltage, current handling capability and low on-resistance:
1. **Power switch**: In power switching applications, such as switch mode power supplies (SMPS) and DC-DC converters, FDB3502-VB can effectively switch current, reduce power loss, and improve conversion efficiency, suitable for power management modules in the medium voltage range.
2. **Motor control**: In motor drive systems, including electric vehicles and power tools, FDB3502-VB can withstand moderate voltage and current loads, ensuring the stability and reliability of the motor under normal operation.
3. **Power amplifier**: In power amplifier circuits, the low on-resistance of FDB3502-VB can reduce power loss and improve overall efficiency, suitable for power management of audio systems and communication equipment.
4. **Battery Management System**: In battery management systems, such as battery protection and charging control circuits, FDB3502-VB can provide reliable switch control, suitable for the management of medium voltage battery systems, improving system safety and efficiency.
FDB3502-VB MOSFET is widely used in various medium voltage and medium current electronic devices and systems with its stable performance and excellent current handling capability, providing efficient switching performance and low power operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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