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FDB33N25TM-VB Product details
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FDB33N25TM-VB MOSFET Product Introduction
FDB33N25TM-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate-source voltage. The on-resistance (RDS(ON)) of FDB33N25TM-VB is 40mΩ. At a gate-source voltage of 10V, it can provide stable switching performance and high current handling capability, with a maximum drain current (ID) of up to 60A. Using Trench technology, this MOSFET has low power consumption and efficient switching performance, suitable for a variety of medium voltage applications.
FDB33N25TM-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, ensuring that it can be turned on at a lower gate-source voltage. The on-resistance (RDS(ON)) of FDB33N25TM-VB is 40mΩ. At a gate-source voltage of 10V, it can provide stable switching performance and high current handling capability, with a maximum drain current (ID) of up to 60A. Using Trench technology, this MOSFET has low power consumption and efficient switching performance, suitable for a variety of medium voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **Medium and high voltage DC-DC converters**: The FDB33N25TM-VB is ideal for medium and high voltage DC-DC converters. Its 250V drain-source voltage and low 40mΩ on-resistance enable it to operate stably in high voltage environments, providing efficient power conversion and current control.
2. **Power management system**: In power management systems, the FDB33N25TM-VB can effectively manage and control power, especially when medium voltage and high current need to be handled. Its high current handling capability (60A) and low power consumption make it a preferred component.
3. **High voltage switch applications**: The FDB33N25TM-VB is suitable for applications that require high voltage switch control. Its 250V drain-source voltage and stable switching performance enable it to reliably control high voltage loads, ensuring system stability and efficiency.
4. **Power switch module**: In the power switch module, the high current handling capability and low on-resistance of FDB33N25TM-VB can effectively reduce switching losses, and is suitable for applications requiring high power and efficient control, such as motor drive and power conversion.
With its superior switching performance and high current handling capability, FDB33N25TM-VB MOSFET is suitable for various applications requiring high voltage and high efficiency, providing a reliable solution to meet the high power requirements in medium voltage systems.
1. **Medium and high voltage DC-DC converters**: The FDB33N25TM-VB is ideal for medium and high voltage DC-DC converters. Its 250V drain-source voltage and low 40mΩ on-resistance enable it to operate stably in high voltage environments, providing efficient power conversion and current control.
2. **Power management system**: In power management systems, the FDB33N25TM-VB can effectively manage and control power, especially when medium voltage and high current need to be handled. Its high current handling capability (60A) and low power consumption make it a preferred component.
3. **High voltage switch applications**: The FDB33N25TM-VB is suitable for applications that require high voltage switch control. Its 250V drain-source voltage and stable switching performance enable it to reliably control high voltage loads, ensuring system stability and efficiency.
4. **Power switch module**: In the power switch module, the high current handling capability and low on-resistance of FDB33N25TM-VB can effectively reduce switching losses, and is suitable for applications requiring high power and efficient control, such as motor drive and power conversion.
With its superior switching performance and high current handling capability, FDB33N25TM-VB MOSFET is suitable for various applications requiring high voltage and high efficiency, providing a reliable solution to meet the high power requirements in medium voltage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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