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FDB28N30TM-VB Product details
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Product Introduction: FDB28N30TM-VB
FDB28N30TM-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. With a maximum drain-source voltage (VDS) of 500V, this MOSFET is suitable for switching and control tasks that require higher voltage tolerance. Its gate-source voltage (VGS) is ±30V and its turn-on threshold voltage (Vth) is 3.5V. At VGS of 10V, its on-resistance (RDS(ON)) is 140mΩ and its drain current (ID) is up to 30A. FDB28N30TM-VB uses SJ_Multi-EPI technology to optimize switching performance and power loss in high voltage applications.
FDB28N30TM-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. With a maximum drain-source voltage (VDS) of 500V, this MOSFET is suitable for switching and control tasks that require higher voltage tolerance. Its gate-source voltage (VGS) is ±30V and its turn-on threshold voltage (Vth) is 3.5V. At VGS of 10V, its on-resistance (RDS(ON)) is 140mΩ and its drain current (ID) is up to 30A. FDB28N30TM-VB uses SJ_Multi-EPI technology to optimize switching performance and power loss in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high voltage handling capability and high current handling capability of the FDB28N30TM-VB MOSFET make it widely used in the following fields and modules:
1. **High voltage switching power supply (SMPS)**: The FDB28N30TM-VB is capable of handling voltages up to 500V and is suitable for high voltage switching power supply designs. Its relatively low on-resistance (140mΩ) and high drain current capability (30A) enable it to provide reliable switching performance in high voltage applications.
2. **Industrial power management**: In industrial power management systems, the FDB28N30TM-VB can be used for high voltage and high current power control tasks. Its stable switching performance and high current handling capability make it suitable for power conversion and management applications.
3. **Electric Vehicle (EV) Battery Management**: Although the operating voltage of electric vehicle systems is higher, the 500V drain-source voltage capability and 30A drain current capability of the FDB28N30TM-VB make it suitable for battery management and high-voltage motor drive systems.
4. **High-Power Switching Devices**: Suitable for a variety of high-power switching devices and high-voltage control modules. The high voltage tolerance and high current handling capabilities of the FDB28N30TM-VB enable it to provide efficient power switching solutions in these applications.
These applications demonstrate the importance of the FDB28N30TM-VB in high-voltage and high-current switching applications, where its excellent voltage tolerance and stable switching performance enable it to play a key role in multiple fields.
The high voltage handling capability and high current handling capability of the FDB28N30TM-VB MOSFET make it widely used in the following fields and modules:
1. **High voltage switching power supply (SMPS)**: The FDB28N30TM-VB is capable of handling voltages up to 500V and is suitable for high voltage switching power supply designs. Its relatively low on-resistance (140mΩ) and high drain current capability (30A) enable it to provide reliable switching performance in high voltage applications.
2. **Industrial power management**: In industrial power management systems, the FDB28N30TM-VB can be used for high voltage and high current power control tasks. Its stable switching performance and high current handling capability make it suitable for power conversion and management applications.
3. **Electric Vehicle (EV) Battery Management**: Although the operating voltage of electric vehicle systems is higher, the 500V drain-source voltage capability and 30A drain current capability of the FDB28N30TM-VB make it suitable for battery management and high-voltage motor drive systems.
4. **High-Power Switching Devices**: Suitable for a variety of high-power switching devices and high-voltage control modules. The high voltage tolerance and high current handling capabilities of the FDB28N30TM-VB enable it to provide efficient power switching solutions in these applications.
These applications demonstrate the importance of the FDB28N30TM-VB in high-voltage and high-current switching applications, where its excellent voltage tolerance and stable switching performance enable it to play a key role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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