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FDB2710-VB Product details
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FDB2710-VB Product Introduction
FDB2710-VB is a high-performance N-channel MOSFET in TO-263 package. It is designed for medium-to-high voltage and high current applications, with a drain-source voltage (VDS) of 250V, making it suitable for handling medium voltage environments. This MOSFET uses Trench technology, with lower on-resistance and higher drain current (ID). When VGS=10V, the on-resistance (RDS(ON)) is 40mΩ. The FDB2710-VB can support currents up to 60A and is suitable for applications that require stable and efficient switching.
FDB2710-VB is a high-performance N-channel MOSFET in TO-263 package. It is designed for medium-to-high voltage and high current applications, with a drain-source voltage (VDS) of 250V, making it suitable for handling medium voltage environments. This MOSFET uses Trench technology, with lower on-resistance and higher drain current (ID). When VGS=10V, the on-resistance (RDS(ON)) is 40mΩ. The FDB2710-VB can support currents up to 60A and is suitable for applications that require stable and efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The high current and medium-to-high voltage handling capabilities of the FDB2710-VB MOSFET enable it to excel in multiple application areas. The following are examples of the application of this MOSFET in different fields and modules:
1. **Switching Power Supply (SMPS)**: In switching power supply applications, the FDB2710-VB can handle voltage inputs up to 250V and support high currents of 60A. Its 40mΩ on-resistance helps reduce power losses and improve power efficiency, making it suitable for high-efficiency DC-DC converters and power regulators.
2. **Motor Drive Systems**: In motor control and drive systems, this MOSFET is able to provide stable high current support. Its current capability of up to 60A and low on-resistance make it suitable for high-power motor control, ensuring system stability and efficiency.
3. **Power Inverter**: In power inverter applications, such as solar inverters and other high voltage inverter systems, the FDB2710-VB can effectively handle 250V voltage input. Its low power loss and high current capability improve the efficiency and reliability of the inverter.
4. **High Power LED Driver**: In high power LED lighting control systems, the FDB2710-VB can effectively handle higher currents and medium voltages, making it suitable for LED driving. Its lower on-resistance and high current handling capability help improve the efficiency of LED lighting systems and reduce heat generation.
These application examples demonstrate the excellent performance of the FDB2710-VB in medium to high voltage and high current environments, making it a key component in high-efficiency electronic systems.
The high current and medium-to-high voltage handling capabilities of the FDB2710-VB MOSFET enable it to excel in multiple application areas. The following are examples of the application of this MOSFET in different fields and modules:
1. **Switching Power Supply (SMPS)**: In switching power supply applications, the FDB2710-VB can handle voltage inputs up to 250V and support high currents of 60A. Its 40mΩ on-resistance helps reduce power losses and improve power efficiency, making it suitable for high-efficiency DC-DC converters and power regulators.
2. **Motor Drive Systems**: In motor control and drive systems, this MOSFET is able to provide stable high current support. Its current capability of up to 60A and low on-resistance make it suitable for high-power motor control, ensuring system stability and efficiency.
3. **Power Inverter**: In power inverter applications, such as solar inverters and other high voltage inverter systems, the FDB2710-VB can effectively handle 250V voltage input. Its low power loss and high current capability improve the efficiency and reliability of the inverter.
4. **High Power LED Driver**: In high power LED lighting control systems, the FDB2710-VB can effectively handle higher currents and medium voltages, making it suitable for LED driving. Its lower on-resistance and high current handling capability help improve the efficiency of LED lighting systems and reduce heat generation.
These application examples demonstrate the excellent performance of the FDB2710-VB in medium to high voltage and high current environments, making it a key component in high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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