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FDB24AN06LA0-VB Product details
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FDB24AN06LA0-VB MOSFET Product Introduction
FDB24AN06LA0-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for low to medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, which means it can be turned on at a lower gate-source voltage. The FDB24AN06LA0-VB has an on-resistance (RDS(ON)) of 12mΩ at a gate-source voltage of 4.5V, and the on-resistance is reduced to 11mΩ at a gate-source voltage of 10V. Its maximum drain current (ID) can reach 75A. Using Trench technology, this MOSFET provides excellent switching performance and a low power solution.
FDB24AN06LA0-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for low to medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, which means it can be turned on at a lower gate-source voltage. The FDB24AN06LA0-VB has an on-resistance (RDS(ON)) of 12mΩ at a gate-source voltage of 4.5V, and the on-resistance is reduced to 11mΩ at a gate-source voltage of 10V. Its maximum drain current (ID) can reach 75A. Using Trench technology, this MOSFET provides excellent switching performance and a low power solution.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications：
Applications and Modules
1. **High-efficiency DC-DC converters**: The FDB24AN06LA0-VB is suitable for high-efficiency DC-DC converters, especially when high current handling and low power consumption are required. Its low on-resistance (11mΩ @ VGS=10V) and high drain current capability (75A) enable it to provide efficient power conversion and reduce energy loss.
2. **Power management system**: In power management systems, the FDB24AN06LA0-VB is able to efficiently control power distribution to meet high current requirements. Its excellent switching performance and low on-resistance help improve the overall efficiency and stability of the power management system.
3. **Motor drive control**: This MOSFET performs well in motor drive systems, especially for applications that require high current and efficient control. The high current handling capability and low on-resistance of the FDB24AN06LA0-VB enable it to efficiently control motor drives and improve system performance.
4. **Power switch module**: In the power switch module, the high current handling capability and low on-resistance of FDB24AN06LA0-VB can effectively reduce switching losses and improve the efficiency of the power switch. It is suitable for scenarios that require high current and fast switching, such as high-frequency switching power supplies and high-power switching applications.
FDB24AN06LA0-VB MOSFET, with its excellent switching performance, low power consumption and high current handling capability, is suitable for a variety of high-efficiency power management and power control applications, providing a reliable and efficient solution for the system.
1. **High-efficiency DC-DC converters**: The FDB24AN06LA0-VB is suitable for high-efficiency DC-DC converters, especially when high current handling and low power consumption are required. Its low on-resistance (11mΩ @ VGS=10V) and high drain current capability (75A) enable it to provide efficient power conversion and reduce energy loss.
2. **Power management system**: In power management systems, the FDB24AN06LA0-VB is able to efficiently control power distribution to meet high current requirements. Its excellent switching performance and low on-resistance help improve the overall efficiency and stability of the power management system.
3. **Motor drive control**: This MOSFET performs well in motor drive systems, especially for applications that require high current and efficient control. The high current handling capability and low on-resistance of the FDB24AN06LA0-VB enable it to efficiently control motor drives and improve system performance.
4. **Power switch module**: In the power switch module, the high current handling capability and low on-resistance of FDB24AN06LA0-VB can effectively reduce switching losses and improve the efficiency of the power switch. It is suitable for scenarios that require high current and fast switching, such as high-frequency switching power supplies and high-power switching applications.
FDB24AN06LA0-VB MOSFET, with its excellent switching performance, low power consumption and high current handling capability, is suitable for a variety of high-efficiency power management and power control applications, providing a reliable and efficient solution for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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