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FDB20AN06A0-VB Product details
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Product Introduction: FDB20AN06A0-VB
FDB20AN06A0-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium voltage switching and control tasks. Its gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.7V. At VGS of 10V, its on-resistance (RDS(ON)) is 11mΩ, and at VGS of 4.5V it is 12mΩ, and the drain current (ID) reaches 75A. FDB20AN06A0-VB uses Trench technology to provide excellent switching performance and low power consumption, making it perform well in high current applications.
FDB20AN06A0-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium voltage switching and control tasks. Its gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.7V. At VGS of 10V, its on-resistance (RDS(ON)) is 11mΩ, and at VGS of 4.5V it is 12mΩ, and the drain current (ID) reaches 75A. FDB20AN06A0-VB uses Trench technology to provide excellent switching performance and low power consumption, making it perform well in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications：
Application fields and modules
The high current handling capability and low on-resistance of FDB20AN06A0-VB MOSFET make it widely used in multiple fields and modules:
1. **High-efficiency switching power supply (SMPS)**: FDB20AN06A0-VB can handle voltages up to 60V and has an extremely low on-resistance (11mΩ). This makes it very suitable for efficient switching power supply design, which can improve power conversion efficiency and reduce energy loss.
2. **Electric Vehicle (EV)**: In the battery management and motor drive system of electric vehicles, FDB20AN06A0-VB provides high current switching capability (75A) and low on-resistance, which helps to improve the performance and battery management efficiency of electric vehicle systems.
3. **Motor drive**: Suitable for various high-current motor control applications. Its high drain current capability and low on-resistance enable it to stably drive high-power motors, ensuring the reliability and efficiency of motors under different working conditions.
4. **Computer and Communication Equipment**: In power management of computer and communication equipment, FDB20AN06A0-VB can be used for high current switching tasks to provide efficient power control. Its low power consumption characteristics can optimize the overall performance and power management of the equipment.
These applications demonstrate the importance of FDB20AN06A0-VB in medium voltage and high current switching applications. Its low on-resistance and high current capability make it play a key role in multiple fields.
The high current handling capability and low on-resistance of FDB20AN06A0-VB MOSFET make it widely used in multiple fields and modules:
1. **High-efficiency switching power supply (SMPS)**: FDB20AN06A0-VB can handle voltages up to 60V and has an extremely low on-resistance (11mΩ). This makes it very suitable for efficient switching power supply design, which can improve power conversion efficiency and reduce energy loss.
2. **Electric Vehicle (EV)**: In the battery management and motor drive system of electric vehicles, FDB20AN06A0-VB provides high current switching capability (75A) and low on-resistance, which helps to improve the performance and battery management efficiency of electric vehicle systems.
3. **Motor drive**: Suitable for various high-current motor control applications. Its high drain current capability and low on-resistance enable it to stably drive high-power motors, ensuring the reliability and efficiency of motors under different working conditions.
4. **Computer and Communication Equipment**: In power management of computer and communication equipment, FDB20AN06A0-VB can be used for high current switching tasks to provide efficient power control. Its low power consumption characteristics can optimize the overall performance and power management of the equipment.
These applications demonstrate the importance of FDB20AN06A0-VB in medium voltage and high current switching applications. Its low on-resistance and high current capability make it play a key role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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