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FDB16AN08A0-VB Product details
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FDB16AN08A0-VB Product Introduction
FDB16AN08A0-VB is a high-performance N-channel MOSFET in TO-263 package. It is designed for low voltage and high current applications, with a drain-source voltage (VDS) of 80V, suitable for handling medium and low voltage environments. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent switching performance. The on-resistance (RDS(ON)) of FDB16AN08A0-VB at VGS=10V is only 6mΩ, and it can support a drain current (ID) of up to 120A. These characteristics make it very suitable for high current, high efficiency application scenarios.
FDB16AN08A0-VB is a high-performance N-channel MOSFET in TO-263 package. It is designed for low voltage and high current applications, with a drain-source voltage (VDS) of 80V, suitable for handling medium and low voltage environments. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent switching performance. The on-resistance (RDS(ON)) of FDB16AN08A0-VB at VGS=10V is only 6mΩ, and it can support a drain current (ID) of up to 120A. These characteristics make it very suitable for high current, high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The high current handling capability and low on-resistance of the FDB16AN08A0-VB MOSFET enable it to excel in many fields. The following are examples of this MOSFET in different applications:
1. **High-efficiency power management**: In high-efficiency power management systems, the FDB16AN08A0-VB can handle 80V voltage input and provide up to 120A current support. Its low on-resistance (6mΩ) helps reduce power loss and improve system efficiency, and is suitable for high-efficiency DC-DC converters and power regulators.
2. **Motor drive applications**: In motor control and drive applications, the FDB16AN08A0-VB can support large currents (up to 120A) and is suitable for the control of high-power motors. Its excellent switching performance and low power loss can ensure the efficiency and stability of motor operation, and is suitable for industrial and automotive motor drive systems.
3. **Power Inverter**: In power inverter applications, such as solar inverters or industrial inverters, the FDB16AN08A0-VB is able to handle high voltage inputs of 80V. Its low on-resistance and high current capability help improve the efficiency and reliability of the inverter, making it suitable for high-power power conversion.
4. **High-power LED Driver**: In high-power LED drive systems, the FDB16AN08A0-VB can effectively handle high currents and medium voltages, making it suitable for LED lighting control. Its low on-resistance and high current handling capability improve the efficiency of the LED driver and reduce heat generation in the system.
These application examples demonstrate the excellent performance of the FDB16AN08A0-VB in high current and low voltage environments, making it an important component in high-efficiency electronic devices.
The high current handling capability and low on-resistance of the FDB16AN08A0-VB MOSFET enable it to excel in many fields. The following are examples of this MOSFET in different applications:
1. **High-efficiency power management**: In high-efficiency power management systems, the FDB16AN08A0-VB can handle 80V voltage input and provide up to 120A current support. Its low on-resistance (6mΩ) helps reduce power loss and improve system efficiency, and is suitable for high-efficiency DC-DC converters and power regulators.
2. **Motor drive applications**: In motor control and drive applications, the FDB16AN08A0-VB can support large currents (up to 120A) and is suitable for the control of high-power motors. Its excellent switching performance and low power loss can ensure the efficiency and stability of motor operation, and is suitable for industrial and automotive motor drive systems.
3. **Power Inverter**: In power inverter applications, such as solar inverters or industrial inverters, the FDB16AN08A0-VB is able to handle high voltage inputs of 80V. Its low on-resistance and high current capability help improve the efficiency and reliability of the inverter, making it suitable for high-power power conversion.
4. **High-power LED Driver**: In high-power LED drive systems, the FDB16AN08A0-VB can effectively handle high currents and medium voltages, making it suitable for LED lighting control. Its low on-resistance and high current handling capability improve the efficiency of the LED driver and reduce heat generation in the system.
These application examples demonstrate the excellent performance of the FDB16AN08A0-VB in high current and low voltage environments, making it an important component in high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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