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FDB14N30TM-VB Product details
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Product Introduction
FDB14N30TM-VB is a high-voltage single N-channel power MOSFET in TO263 package. It has a drain-source breakdown voltage (VDS) of 500V and a continuous drain current (ID) of 18A, suitable for high-voltage and medium-current applications. This MOSFET adopts SJ_Multi-EPI technology, which ensures good switching performance and low on-resistance (RDS(ON)), enabling efficient energy conversion and reliable power control in high-voltage environments.
FDB14N30TM-VB is a high-voltage single N-channel power MOSFET in TO263 package. It has a drain-source breakdown voltage (VDS) of 500V and a continuous drain current (ID) of 18A, suitable for high-voltage and medium-current applications. This MOSFET adopts SJ_Multi-EPI technology, which ensures good switching performance and low on-resistance (RDS(ON)), enabling efficient energy conversion and reliable power control in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | 240mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 240mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 18A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 240mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 18A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
The high withstand voltage and medium current capability of the FDB14N30TM-VB MOSFET make it suitable for multiple high voltage application fields. Here are some typical application scenarios:
1. **High voltage power converter**: In DC-DC converters and AC-DC power modules, the FDB14N30TM-VB is able to handle high voltage inputs, ensuring efficient power conversion and stable output. Its higher VDS allows operation at higher voltages, suitable for demanding power applications.
2. **Power amplifier**: In high power amplifier designs, the FDB14N30TM-VB provides high voltage withstand capability and good switching performance, which helps achieve efficient power amplification and improves the overall performance of the system.
3. **Inverter**: In solar photovoltaic inverters and other high voltage inverter systems, the high drain-source breakdown voltage of this MOSFET is suitable for converting DC power to AC power, supporting efficient power conversion and system stability.
4. **High Voltage Switch**: In applications that require high voltage switching, such as high voltage power switching and load control systems, the FDB14N30TM-VB can effectively control high voltage loads to ensure system reliability and safety.
5. **Motor Drive**: Although it is mainly used in high voltage applications, the FDB14N30TM-VB can also be used in situations where high voltage motor drive is required, such as power tools and industrial motor drive systems, to provide stable current control.
In short, the FDB14N30TM-VB MOSFET has demonstrated excellent performance in the fields of high voltage power conversion, power amplifiers, inverters, high voltage switches, and motor drives, and is suitable for applications that require high voltage handling and stable power control.
The high withstand voltage and medium current capability of the FDB14N30TM-VB MOSFET make it suitable for multiple high voltage application fields. Here are some typical application scenarios:
1. **High voltage power converter**: In DC-DC converters and AC-DC power modules, the FDB14N30TM-VB is able to handle high voltage inputs, ensuring efficient power conversion and stable output. Its higher VDS allows operation at higher voltages, suitable for demanding power applications.
2. **Power amplifier**: In high power amplifier designs, the FDB14N30TM-VB provides high voltage withstand capability and good switching performance, which helps achieve efficient power amplification and improves the overall performance of the system.
3. **Inverter**: In solar photovoltaic inverters and other high voltage inverter systems, the high drain-source breakdown voltage of this MOSFET is suitable for converting DC power to AC power, supporting efficient power conversion and system stability.
4. **High Voltage Switch**: In applications that require high voltage switching, such as high voltage power switching and load control systems, the FDB14N30TM-VB can effectively control high voltage loads to ensure system reliability and safety.
5. **Motor Drive**: Although it is mainly used in high voltage applications, the FDB14N30TM-VB can also be used in situations where high voltage motor drive is required, such as power tools and industrial motor drive systems, to provide stable current control.
In short, the FDB14N30TM-VB MOSFET has demonstrated excellent performance in the fields of high voltage power conversion, power amplifiers, inverters, high voltage switches, and motor drives, and is suitable for applications that require high voltage handling and stable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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