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FDB13AN06A0-VB Product details
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FDB13AN06A0-VB MOSFET Product Introduction
FDB13AN06A0-VB is a high-performance N-channel power MOSFET in TO263 package. This MOSFET uses Trench technology and has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 12mΩ, and at a gate voltage of 10V it is 11mΩ. The FDB13AN06A0-VB is designed to provide low on-resistance and high current handling capability, making it ideal for high-efficiency switching and power management applications.
FDB13AN06A0-VB is a high-performance N-channel power MOSFET in TO263 package. This MOSFET uses Trench technology and has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 75A. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 12mΩ, and at a gate voltage of 10V it is 11mΩ. The FDB13AN06A0-VB is designed to provide low on-resistance and high current handling capability, making it ideal for high-efficiency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 80W
- **Switching speed**: High
- **Typical application frequency**: High frequency switching power supply
- **breakdown voltage**: 60V
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 80W
- **Switching speed**: High
- **Typical application frequency**: High frequency switching power supply
- **breakdown voltage**: 60V
Domain and module applications：
Applications and module examples
1. **High-efficiency power management**
FDB13AN06A0-VB is ideal for high-efficiency power management applications such as DC-DC converters and AC-DC adapters. Its low on-resistance and high current handling capability ensure high efficiency of the power conversion process, reduce energy loss, and improve the overall efficiency of the system.
2. **Motor drive system**
In motor drive systems, FDB13AN06A0-VB can be used as a switching element to handle high current loads. Its high current capability and low on-resistance enable it to stably drive motors, suitable for applications such as industrial motor control and automotive motor drive.
3. **Switching power supply (SMPS)**
FDB13AN06A0-VB is suitable for use as the main switching element in high-frequency switching power supplies (SMPS). Its low on-resistance and high switching speed enable it to provide stable power conversion at high frequency operation, optimizing the performance and efficiency of the power supply.
4. **Automotive electronics**
In automotive electronic systems, the FDB13AN06A0-VB can be used in a variety of high-power power supplies and motor control modules. Its high current handling capability and stable switching performance make it suitable for use in electric vehicle drive systems, on-board chargers, and power management modules.
5. **Power amplifier**
The FDB13AN06A0-VB is also suitable for switching applications in power amplifiers. Its low on-resistance and high current capability help improve the overall performance and efficiency of the power amplifier, and is suitable for applications such as audio amplifiers and RF amplifiers.
The FDB13AN06A0-VB MOSFET provides superior performance in power management, motor drives, switching power supplies, automotive electronics, and power amplifiers through its low on-resistance and high current capability.
1. **High-efficiency power management**
FDB13AN06A0-VB is ideal for high-efficiency power management applications such as DC-DC converters and AC-DC adapters. Its low on-resistance and high current handling capability ensure high efficiency of the power conversion process, reduce energy loss, and improve the overall efficiency of the system.
2. **Motor drive system**
In motor drive systems, FDB13AN06A0-VB can be used as a switching element to handle high current loads. Its high current capability and low on-resistance enable it to stably drive motors, suitable for applications such as industrial motor control and automotive motor drive.
3. **Switching power supply (SMPS)**
FDB13AN06A0-VB is suitable for use as the main switching element in high-frequency switching power supplies (SMPS). Its low on-resistance and high switching speed enable it to provide stable power conversion at high frequency operation, optimizing the performance and efficiency of the power supply.
4. **Automotive electronics**
In automotive electronic systems, the FDB13AN06A0-VB can be used in a variety of high-power power supplies and motor control modules. Its high current handling capability and stable switching performance make it suitable for use in electric vehicle drive systems, on-board chargers, and power management modules.
5. **Power amplifier**
The FDB13AN06A0-VB is also suitable for switching applications in power amplifiers. Its low on-resistance and high current capability help improve the overall performance and efficiency of the power amplifier, and is suitable for applications such as audio amplifiers and RF amplifiers.
The FDB13AN06A0-VB MOSFET provides superior performance in power management, motor drives, switching power supplies, automotive electronics, and power amplifiers through its low on-resistance and high current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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