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FDB12P10-VB Product details
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Product Introduction
FDB12P10-VB is a high-performance single P-channel power MOSFET in TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of -100V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -2V, and it uses Trench technology to provide low on-resistance and excellent switching performance. The FDB12P10-VB has an on-resistance of 240mΩ at a gate voltage of 4.5V, and the on-resistance is reduced to 200mΩ at a gate voltage of 10V. It can handle a drain current (ID) of up to -12A, making it ideal for applications with high current and low on-resistance.
FDB12P10-VB is a high-performance single P-channel power MOSFET in TO263 package. This MOSFET can withstand a drain-source voltage (VDS) of -100V and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -2V, and it uses Trench technology to provide low on-resistance and excellent switching performance. The FDB12P10-VB has an on-resistance of 240mΩ at a gate voltage of 4.5V, and the on-resistance is reduced to 200mΩ at a gate voltage of 10V. It can handle a drain current (ID) of up to -12A, making it ideal for applications with high current and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ@VGS=4.5V
- 200mΩ@VGS=10V
- **Continuous drain current (ID)**: -12A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 240mΩ@VGS=4.5V
- 200mΩ@VGS=10V
- **Continuous drain current (ID)**: -12A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
FDB12P10-VB MOSFET is suitable for the following fields and modules due to its good current handling capability and relatively low on-resistance:
1. **High-efficiency load switching**: In high-efficiency load switching applications, such as power management and load switching circuits, FDB12P10-VB can provide stable switching performance and low energy loss, suitable for occasions requiring high current control.
2. **DC-DC converter**: In DC-DC converters, the low on-resistance and high current capability of FDB12P10-VB enable it to effectively handle current and reduce power loss, improve conversion efficiency, and is suitable for power conversion and voltage regulation modules.
3. **Motor reverse control**: In motor drive systems, especially in applications where reverse control is required, such as reverse switching of electric vehicles or power tools, FDB12P10-VB can achieve efficient control and protection.
4. **Power Management Module**: In the power management module, including power management and charging control circuits, the FDB12P10-VB can effectively handle high currents and provide stable switching control, suitable for battery protection and power regulation.
The low on-resistance and high current handling capability of the FDB12P10-VB MOSFET make it excel in a variety of high-current, low-power applications, especially where efficient switching and reliable control are required.
FDB12P10-VB MOSFET is suitable for the following fields and modules due to its good current handling capability and relatively low on-resistance:
1. **High-efficiency load switching**: In high-efficiency load switching applications, such as power management and load switching circuits, FDB12P10-VB can provide stable switching performance and low energy loss, suitable for occasions requiring high current control.
2. **DC-DC converter**: In DC-DC converters, the low on-resistance and high current capability of FDB12P10-VB enable it to effectively handle current and reduce power loss, improve conversion efficiency, and is suitable for power conversion and voltage regulation modules.
3. **Motor reverse control**: In motor drive systems, especially in applications where reverse control is required, such as reverse switching of electric vehicles or power tools, FDB12P10-VB can achieve efficient control and protection.
4. **Power Management Module**: In the power management module, including power management and charging control circuits, the FDB12P10-VB can effectively handle high currents and provide stable switching control, suitable for battery protection and power regulation.
The low on-resistance and high current handling capability of the FDB12P10-VB MOSFET make it excel in a variety of high-current, low-power applications, especially where efficient switching and reliable control are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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