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FDB12N50F-VB Product details
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FDB12N50F-VB MOSFET Product Introduction
FDB12N50F-VB is a high voltage, high performance single N-channel MOSFET in TO263 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 800mΩ when the gate-source voltage is 10V, and it can withstand a maximum drain current (ID) of 12A. The FDB12N50F-VB uses Plannar technology to ensure stable and reliable switching performance in high voltage environments.
FDB12N50F-VB is a high voltage, high performance single N-channel MOSFET in TO263 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 800mΩ when the gate-source voltage is 10V, and it can withstand a maximum drain current (ID) of 12A. The FDB12N50F-VB uses Plannar technology to ensure stable and reliable switching performance in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 12A | 800mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology type**: Plannar
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology type**: Plannar
Domain and module applications：
Applications and modules
1. **High-voltage power switch**: The FDB12N50F-VB is ideal for high-voltage power switch applications. Its 650V drain-source voltage and 800mΩ on-resistance enable it to operate stably in high-voltage environments, making it suitable for current control and management in power switches.
2. **Power management system**: In power management systems, the FDB12N50F-VB's high voltage tolerance and 12A current handling capability can meet high power requirements. Its stable switching performance helps optimize power distribution and management, improving the overall efficiency of the system.
3. **Industrial power module**: The FDB12N50F-VB is suitable for high-voltage switch applications in industrial power modules. Its high voltage tolerance and high on-resistance enable it to reliably control power in industrial environments, ensuring stable operation of equipment.
4. **Electric vehicle charging system**: In electric vehicle charging systems, the FDB12N50F-VB can be used for switch control of high-voltage chargers. Its high voltage capability and stable performance can cope with high voltage charging requirements and ensure the safety and efficiency of the charging process.
FDB12N50F-VB MOSFET, with its high voltage tolerance, stable switching performance and moderate on-resistance, is suitable for application scenarios requiring high voltage and high power, providing a reliable solution to ensure system stability and efficiency.
1. **High-voltage power switch**: The FDB12N50F-VB is ideal for high-voltage power switch applications. Its 650V drain-source voltage and 800mΩ on-resistance enable it to operate stably in high-voltage environments, making it suitable for current control and management in power switches.
2. **Power management system**: In power management systems, the FDB12N50F-VB's high voltage tolerance and 12A current handling capability can meet high power requirements. Its stable switching performance helps optimize power distribution and management, improving the overall efficiency of the system.
3. **Industrial power module**: The FDB12N50F-VB is suitable for high-voltage switch applications in industrial power modules. Its high voltage tolerance and high on-resistance enable it to reliably control power in industrial environments, ensuring stable operation of equipment.
4. **Electric vehicle charging system**: In electric vehicle charging systems, the FDB12N50F-VB can be used for switch control of high-voltage chargers. Its high voltage capability and stable performance can cope with high voltage charging requirements and ensure the safety and efficiency of the charging process.
FDB12N50F-VB MOSFET, with its high voltage tolerance, stable switching performance and moderate on-resistance, is suitable for application scenarios requiring high voltage and high power, providing a reliable solution to ensure system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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