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FDB120N10-VB Product details
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Product Introduction: FDB120N10-VB
FDB120N10-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 100V, which is suitable for medium voltage switching and control tasks. The gate-source voltage (VGS) of this MOSFET is ±20V, and the turn-on threshold voltage (Vth) is 2.5V. At VGS of 10V, the on-resistance (RDS(ON)) is as low as 10mΩ, and at VGS of 4.5V it is 23mΩ, and the drain current (ID) is as high as 100A. FDB120N10-VB uses Trench technology to optimize switching performance and power loss, giving it excellent efficiency and stability in high current applications.
FDB120N10-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 100V, which is suitable for medium voltage switching and control tasks. The gate-source voltage (VGS) of this MOSFET is ±20V, and the turn-on threshold voltage (Vth) is 2.5V. At VGS of 10V, the on-resistance (RDS(ON)) is as low as 10mΩ, and at VGS of 4.5V it is 23mΩ, and the drain current (ID) is as high as 100A. FDB120N10-VB uses Trench technology to optimize switching performance and power loss, giving it excellent efficiency and stability in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The high current handling capability and low on-resistance of the FDB120N10-VB MOSFET enable it to excel in multiple areas:
1. **High-power switch mode power supply (SMPS)**: The FDB120N10-VB is capable of handling voltages up to 100V and is suitable for high-power switch mode power supply designs. Its low on-resistance (10mΩ) and high drain current capability (100A) provide efficient switching performance, suitable for power conversion and power management.
2. **Electric Vehicles (EV)**: In the battery management system and motor drive system of electric vehicles, the FDB120N10-VB provides high current switching capability and low power consumption. Its excellent on-resistance enables it to perform well in high-current applications, helping to improve the performance and efficiency of electric vehicles.
3. **Motor Drive**: Suitable for various motor control systems. The high current capability (100A) and low on-resistance (10mΩ) of the FDB120N10-VB enable it to stably drive high-power motors and provide efficient switching operations during motor startup and operation.
4. **Computer and Communication Equipment**: In the power management system of computer and communication equipment, the FDB120N10-VB can be used for high-current switching and load control. Its excellent switching performance and low power consumption characteristics can optimize the power efficiency and performance of the equipment.
These applications demonstrate the importance of the FDB120N10-VB in high-current and medium-voltage switching applications, where its low on-resistance and high current capability enable it to play a key role in multiple fields.
The high current handling capability and low on-resistance of the FDB120N10-VB MOSFET enable it to excel in multiple areas:
1. **High-power switch mode power supply (SMPS)**: The FDB120N10-VB is capable of handling voltages up to 100V and is suitable for high-power switch mode power supply designs. Its low on-resistance (10mΩ) and high drain current capability (100A) provide efficient switching performance, suitable for power conversion and power management.
2. **Electric Vehicles (EV)**: In the battery management system and motor drive system of electric vehicles, the FDB120N10-VB provides high current switching capability and low power consumption. Its excellent on-resistance enables it to perform well in high-current applications, helping to improve the performance and efficiency of electric vehicles.
3. **Motor Drive**: Suitable for various motor control systems. The high current capability (100A) and low on-resistance (10mΩ) of the FDB120N10-VB enable it to stably drive high-power motors and provide efficient switching operations during motor startup and operation.
4. **Computer and Communication Equipment**: In the power management system of computer and communication equipment, the FDB120N10-VB can be used for high-current switching and load control. Its excellent switching performance and low power consumption characteristics can optimize the power efficiency and performance of the equipment.
These applications demonstrate the importance of the FDB120N10-VB in high-current and medium-voltage switching applications, where its low on-resistance and high current capability enable it to play a key role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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