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FDB10N20C-VB Product details
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FDB10N20C-VB Product Introduction
FDB10N20C-VB is a high-performance N-channel MOSFET in TO-263 package, designed for medium and high voltage and current applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for handling medium and high voltage environments. Using Trench technology, the FDB10N20C-VB provides good on-resistance and switching performance. Its on-resistance (RDS(ON)) is 300mΩ at VGS=10V, and can support a drain current (ID) of up to 10A. This feature makes the FDB10N20C-VB very suitable for applications that require stable current handling and efficient switching.
FDB10N20C-VB is a high-performance N-channel MOSFET in TO-263 package, designed for medium and high voltage and current applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for handling medium and high voltage environments. Using Trench technology, the FDB10N20C-VB provides good on-resistance and switching performance. Its on-resistance (RDS(ON)) is 300mΩ at VGS=10V, and can support a drain current (ID) of up to 10A. This feature makes the FDB10N20C-VB very suitable for applications that require stable current handling and efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The performance of the FDB10N20C-VB MOSFET enables it to excel in multiple application areas. The following are examples of the application of this MOSFET in different fields and modules:
1. **Switching Power Supply (SMPS)**: In switching power supply design, the FDB10N20C-VB is able to handle a voltage input of 200V and provide good switching performance. Its 300mΩ on-resistance helps reduce power loss and improve power efficiency, making it suitable for high-efficiency power conversion and regulation.
2. **Motor Control**: In motor drive applications, the FDB10N20C-VB supports currents up to 10A, making it suitable for the control and drive of medium and high power motors. Its low on-resistance improves the efficiency and stability of motor control, making it suitable for a variety of industrial and automotive motor applications.
3. **Power Inverter**: In power inverter systems, such as solar inverters or other high voltage inverters, the FDB10N20C-VB is able to handle high voltage inputs of 200V. Its excellent switching performance and low power loss help improve system reliability and efficiency.
4. **High Power LED Driver**: In high power LED driver and lighting systems, the FDB10N20C-VB is able to effectively handle higher currents and is suitable for high efficiency lighting control. Its lower on-resistance helps improve drive efficiency and reduces heat generation.
These application examples demonstrate the superior performance of the FDB10N20C-VB in medium and high voltage and current applications, making it a key component in high efficiency electronic systems.
The performance of the FDB10N20C-VB MOSFET enables it to excel in multiple application areas. The following are examples of the application of this MOSFET in different fields and modules:
1. **Switching Power Supply (SMPS)**: In switching power supply design, the FDB10N20C-VB is able to handle a voltage input of 200V and provide good switching performance. Its 300mΩ on-resistance helps reduce power loss and improve power efficiency, making it suitable for high-efficiency power conversion and regulation.
2. **Motor Control**: In motor drive applications, the FDB10N20C-VB supports currents up to 10A, making it suitable for the control and drive of medium and high power motors. Its low on-resistance improves the efficiency and stability of motor control, making it suitable for a variety of industrial and automotive motor applications.
3. **Power Inverter**: In power inverter systems, such as solar inverters or other high voltage inverters, the FDB10N20C-VB is able to handle high voltage inputs of 200V. Its excellent switching performance and low power loss help improve system reliability and efficiency.
4. **High Power LED Driver**: In high power LED driver and lighting systems, the FDB10N20C-VB is able to effectively handle higher currents and is suitable for high efficiency lighting control. Its lower on-resistance helps improve drive efficiency and reduces heat generation.
These application examples demonstrate the superior performance of the FDB10N20C-VB in medium and high voltage and current applications, making it a key component in high efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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