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FDB075N15A-VB Product details
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Product Introduction
FDB075N15A-VB is a high-performance single N-channel power MOSFET in TO263 package. It has a drain-source breakdown voltage (VDS) of 150V and a continuous drain current (ID) of up to 128A, which is particularly suitable for high voltage and high current applications. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), which enables it to have excellent efficiency and performance in power conversion and switching applications.
FDB075N15A-VB is a high-performance single N-channel power MOSFET in TO263 package. It has a drain-source breakdown voltage (VDS) of 150V and a continuous drain current (ID) of up to 128A, which is particularly suitable for high voltage and high current applications. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), which enables it to have excellent efficiency and performance in power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 128A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 128A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
The high voltage and high current capabilities of the FDB075N15A-VB MOSFET, combined with low on-resistance, make it suitable for multiple demanding application fields. Here are some typical application scenarios:
1. **High current power converter**: In DC-DC converters and AC-DC power modules, the FDB075N15A-VB is able to efficiently handle high current and high voltage inputs. Its low on-resistance helps reduce power losses and improve conversion efficiency, making it suitable for high power power applications.
2. **Motor drive system**: Due to its high current carrying capacity, this MOSFET is suitable for electric vehicles, power tools, and industrial motor drive systems, and can stably control the motor current to ensure efficient and reliable operation of the motor.
3. **Power amplifier**: In high power amplifier applications, the FDB075N15A-VB provides extremely low on-resistance and high current capability, supporting high power output and improving the overall efficiency of the amplifier.
4. **Inverter**: In solar photovoltaic inverters and UPS (uninterruptible power supply) systems, the high voltage and high current characteristics of FDB075N15A-VB enable it to effectively convert DC to AC and provide stable power output.
5. **High-power switch**: This MOSFET is suitable for applications that require high-power switching, such as power switches and load control systems. Its low on-resistance and high current handling capabilities ensure the stability and efficiency of the switching operation.
In short, FDB075N15A-VB MOSFET demonstrates excellent performance in power conversion, motor drive, power amplifier, inverter and high-power switch, and can meet the needs of high voltage and high current, providing efficient and reliable solutions.
The high voltage and high current capabilities of the FDB075N15A-VB MOSFET, combined with low on-resistance, make it suitable for multiple demanding application fields. Here are some typical application scenarios:
1. **High current power converter**: In DC-DC converters and AC-DC power modules, the FDB075N15A-VB is able to efficiently handle high current and high voltage inputs. Its low on-resistance helps reduce power losses and improve conversion efficiency, making it suitable for high power power applications.
2. **Motor drive system**: Due to its high current carrying capacity, this MOSFET is suitable for electric vehicles, power tools, and industrial motor drive systems, and can stably control the motor current to ensure efficient and reliable operation of the motor.
3. **Power amplifier**: In high power amplifier applications, the FDB075N15A-VB provides extremely low on-resistance and high current capability, supporting high power output and improving the overall efficiency of the amplifier.
4. **Inverter**: In solar photovoltaic inverters and UPS (uninterruptible power supply) systems, the high voltage and high current characteristics of FDB075N15A-VB enable it to effectively convert DC to AC and provide stable power output.
5. **High-power switch**: This MOSFET is suitable for applications that require high-power switching, such as power switches and load control systems. Its low on-resistance and high current handling capabilities ensure the stability and efficiency of the switching operation.
In short, FDB075N15A-VB MOSFET demonstrates excellent performance in power conversion, motor drive, power amplifier, inverter and high-power switch, and can meet the needs of high voltage and high current, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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