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FDB060AN08A0-VB Product details

Product introduction:

FDB060AN08A0-VB MOSFET Product Introduction

FDB060AN08A0-VB is a high-performance N-channel power MOSFET packaged in TO263. This MOSFET uses Trench technology and has a drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 120A. Its on-resistance (RDS(ON)) is 10mΩ at a gate voltage of 4.5V and 6mΩ at a gate voltage of 10V. Designed to meet the needs of high current and high power applications, the FDA060AN08A0-VB provides low on-resistance and high switching speed, making it ideal for high-efficiency power supplies and switch control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 100W
- **Switching speed**: High
- **Typical application frequency**: High frequency switching power supply
- **breakdown voltage**: 80V

Domain and module applications:

Applications and module examples

1. **High-efficiency power management**
FDB060AN08A0-VB is ideal for high-efficiency power management applications such as DC-DC converters and AC-DC adapters. Its low on-resistance and high current handling capability ensure high efficiency of the power conversion process, reduce energy loss, and improve the overall efficiency of the system.

2. **Motor drive system**
In motor drive systems, FDB060AN08A0-VB can be used as a switching element to handle high current loads. Its high current capability and low on-resistance enable it to stably drive motors, suitable for applications such as industrial motor control and automotive motor drive.

3. **Switching power supply (SMPS)**
FDB060AN08A0-VB is suitable for use as the main switching element in high-frequency switching power supplies (SMPS). Its low on-resistance and high switching speed enable it to provide stable power conversion at high frequency operations, optimizing the performance and efficiency of the power supply.

4. **Automotive Electronics**
In automotive electronic systems, the FDB060AN08A0-VB can be used in a variety of high-power power supplies and motor control modules. Its high current handling capability and stable switching performance make it suitable for use in electric vehicle drive systems, on-board chargers, and power management modules.

5. **Power Amplifier**
The FDB060AN08A0-VB is also suitable for switching applications in power amplifiers. Its low on-resistance and high current capability help improve the overall performance and efficiency of power amplifiers, and is suitable for applications such as audio amplifiers and RF amplifiers.

With its excellent low on-resistance and high current capability, the FDB060AN08A0-VB MOSFET provides superior performance in power management, motor drives, switching power supplies, automotive electronics, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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