中文
English
FDB045AN08A0-VB Product details
Back to previous pageProduct introduction：
Product Introduction
FDB045AN08A0-VB is a high-performance single N-channel power MOSFET in a TO263 package. This MOSFET has an 80V drain-source voltage (VDS) capability and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and Trench technology is used to achieve low on-resistance and efficient switching performance. The FDB045AN08A0-VB has an on-resistance of 10mΩ at a gate voltage of 4.5V, and further reduces to 6mΩ at a gate voltage of 10V, capable of handling a drain current (ID) of up to 120A. This design makes it perform particularly well in application scenarios requiring high current and low on-resistance.
FDB045AN08A0-VB is a high-performance single N-channel power MOSFET in a TO263 package. This MOSFET has an 80V drain-source voltage (VDS) capability and supports a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and Trench technology is used to achieve low on-resistance and efficient switching performance. The FDB045AN08A0-VB has an on-resistance of 10mΩ at a gate voltage of 4.5V, and further reduces to 6mΩ at a gate voltage of 10V, capable of handling a drain current (ID) of up to 120A. This design makes it perform particularly well in application scenarios requiring high current and low on-resistance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The FDB045AN08A0-VB MOSFET is widely used in the following fields and modules due to its excellent current handling capability and low on-resistance:
1. **High-efficiency power conversion**: In high-efficiency power conversion applications, such as switch mode power supplies (SMPS) and DC-DC converters, the FDB045AN08A0-VB can optimize power conversion with low on-resistance and high current capability, improve conversion efficiency and reduce energy loss.
2. **Motor drive**: This MOSFET is particularly suitable for use in motor drive systems, including electric vehicles and power tools. In these applications, the FDB045AN08A0-VB can withstand high current loads, ensuring high efficiency and reliability of the motor during operation.
3. **Power amplifier**: In power amplifier circuits, the low on-resistance of the FDB045AN08A0-VB can effectively reduce power loss and improve the overall performance of the amplifier, making it suitable for applications that require high efficiency, such as audio systems and communication equipment.
4. **Battery Management System**: For battery management systems, including battery protection and charging control circuits, FDB045AN08A0-VB can provide reliable switch control, protect batteries from overcurrent and overvoltage, and improve system safety and reliability.
FDB045AN08A0-VB excels in a variety of high-performance power management, motor control and power applications with its low on-resistance and high current capability, providing optimized switching performance and reliable current handling capabilities.
The FDB045AN08A0-VB MOSFET is widely used in the following fields and modules due to its excellent current handling capability and low on-resistance:
1. **High-efficiency power conversion**: In high-efficiency power conversion applications, such as switch mode power supplies (SMPS) and DC-DC converters, the FDB045AN08A0-VB can optimize power conversion with low on-resistance and high current capability, improve conversion efficiency and reduce energy loss.
2. **Motor drive**: This MOSFET is particularly suitable for use in motor drive systems, including electric vehicles and power tools. In these applications, the FDB045AN08A0-VB can withstand high current loads, ensuring high efficiency and reliability of the motor during operation.
3. **Power amplifier**: In power amplifier circuits, the low on-resistance of the FDB045AN08A0-VB can effectively reduce power loss and improve the overall performance of the amplifier, making it suitable for applications that require high efficiency, such as audio systems and communication equipment.
4. **Battery Management System**: For battery management systems, including battery protection and charging control circuits, FDB045AN08A0-VB can provide reliable switch control, protect batteries from overcurrent and overvoltage, and improve system safety and reliability.
FDB045AN08A0-VB excels in a variety of high-performance power management, motor control and power applications with its low on-resistance and high current capability, providing optimized switching performance and reliable current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
