FDB039N06-VB Product details
Product introduction:
FDB039N06-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for low and medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V. At a gate-source voltage of 4.5V, its on-resistance (RDS(ON)) is 12mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 3.2mΩ. With a maximum drain current (ID) of up to 210A, the FDA039N06-VB uses Trench technology to provide efficient switching performance and low power consumption solutions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology type**: Trench
Domain and module applications:
1. **DC-DC converter**: FDB039N06-VB is well suited for use in DC-DC converters, especially in medium and low voltage applications. Its low on-resistance (especially 3.2mΩ@VGS=10V) can significantly reduce power loss and improve the overall efficiency of the converter. The drain current capability of up to 210A enables it to handle high power conversion needs.
2. **Power management module**: In the power management module, the high current handling capability and low on-resistance of FDB039N06-VB enable it to efficiently manage power distribution. Its excellent switching performance helps optimize the power management system and reduce energy loss.
3. **Motor drive system**: In the motor drive system, FDB039N06-VB can efficiently control current and provide stable drive capability. Its high drain current capability enables it to meet the high power requirements in motor drive, while the low on-resistance helps improve the efficiency of the system.
4. **High-efficiency switching power supply**: In high-efficiency switching power supplies, the low on-resistance and high current capability of FDB039N06-VB can effectively reduce switching losses and improve system performance. Especially in high-frequency switching operations, it can provide fast response and efficient switching control.
FDB039N06-VB MOSFET, with its high current handling capability, low on-resistance and excellent switching performance, is suitable for applications requiring high efficiency and low power consumption, especially in medium and low voltage power management and power conversion.
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