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FDB039N06-VB Product details

Product introduction:

FDB039N06-VB MOSFET Product Introduction

FDB039N06-VB is a high-performance single N-channel MOSFET in a TO263 package. Designed for low and medium voltage applications, this MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V. At a gate-source voltage of 4.5V, its on-resistance (RDS(ON)) is 12mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 3.2mΩ. With a maximum drain current (ID) of up to 210A, the FDA039N06-VB uses Trench technology to provide efficient switching performance and low power consumption solutions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 210A 3.2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology type**: Trench

Domain and module applications:

Applications and modules

1. **DC-DC converter**: FDB039N06-VB is well suited for use in DC-DC converters, especially in medium and low voltage applications. Its low on-resistance (especially 3.2mΩ@VGS=10V) can significantly reduce power loss and improve the overall efficiency of the converter. The drain current capability of up to 210A enables it to handle high power conversion needs.

2. **Power management module**: In the power management module, the high current handling capability and low on-resistance of FDB039N06-VB enable it to efficiently manage power distribution. Its excellent switching performance helps optimize the power management system and reduce energy loss.

3. **Motor drive system**: In the motor drive system, FDB039N06-VB can efficiently control current and provide stable drive capability. Its high drain current capability enables it to meet the high power requirements in motor drive, while the low on-resistance helps improve the efficiency of the system.

4. **High-efficiency switching power supply**: In high-efficiency switching power supplies, the low on-resistance and high current capability of FDB039N06-VB can effectively reduce switching losses and improve system performance. Especially in high-frequency switching operations, it can provide fast response and efficient switching control.

FDB039N06-VB MOSFET, with its high current handling capability, low on-resistance and excellent switching performance, is suitable for applications requiring high efficiency and low power consumption, especially in medium and low voltage power management and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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