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FDB035AN06A0-VB Product details
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Product Introduction: FDB035AN06A0-VB
FDB035AN06A0-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium and low voltage switching environments. Its gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 3V. When VGS is 10V, its on-resistance (RDS(ON)) is extremely low, 4mΩ, and the drain current (ID) is as high as 150A. FDB035AN06A0-VB uses Trench technology to optimize switching performance and power loss, giving it excellent efficiency and stability in high current applications.
FDB035AN06A0-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium and low voltage switching environments. Its gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 3V. When VGS is 10V, its on-resistance (RDS(ON)) is extremely low, 4mΩ, and the drain current (ID) is as high as 150A. FDB035AN06A0-VB uses Trench technology to optimize switching performance and power loss, giving it excellent efficiency and stability in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
The high current handling capability and low on-resistance of the FDB035AN06A0-VB MOSFET enable it to excel in the following areas and modules:
1. **High-power switch mode power supply (SMPS)**: The FDB035AN06A0-VB can handle voltages up to 60V, making it suitable for high-power switch mode power supply designs. Its low on-resistance (4mΩ) and high drain current capability (150A) enable it to provide efficient switching performance and reduce power consumption in power conversion and regulation.
2. **Electric vehicle (EV) power management**: In the power management system of electric vehicles, the FDB035AN06A0-VB is able to support high-current switching operations. Its low on-resistance and high current capability make it suitable for battery management systems and motor drive systems, improving the efficiency and performance of electric vehicles.
3. **High Current Load Switch**: Suitable for switching applications with high current loads, such as motor control and high power drive systems. Its high drain current capability and low on-resistance can provide stable switching performance under high current conditions, ensuring reliable operation of the system.
4. **Computer and Communication Equipment**: In computer and communication equipment, FDB035AN06A0-VB can be used for high current switching applications, providing efficient power management and signal control. Its excellent switching characteristics and low power consumption make it excel in these fields.
These applications demonstrate the importance of FDB035AN06A0-VB in high current and low voltage switching applications, where its low on-resistance and high current capability make it play a key role in multiple fields.
The high current handling capability and low on-resistance of the FDB035AN06A0-VB MOSFET enable it to excel in the following areas and modules:
1. **High-power switch mode power supply (SMPS)**: The FDB035AN06A0-VB can handle voltages up to 60V, making it suitable for high-power switch mode power supply designs. Its low on-resistance (4mΩ) and high drain current capability (150A) enable it to provide efficient switching performance and reduce power consumption in power conversion and regulation.
2. **Electric vehicle (EV) power management**: In the power management system of electric vehicles, the FDB035AN06A0-VB is able to support high-current switching operations. Its low on-resistance and high current capability make it suitable for battery management systems and motor drive systems, improving the efficiency and performance of electric vehicles.
3. **High Current Load Switch**: Suitable for switching applications with high current loads, such as motor control and high power drive systems. Its high drain current capability and low on-resistance can provide stable switching performance under high current conditions, ensuring reliable operation of the system.
4. **Computer and Communication Equipment**: In computer and communication equipment, FDB035AN06A0-VB can be used for high current switching applications, providing efficient power management and signal control. Its excellent switching characteristics and low power consumption make it excel in these fields.
These applications demonstrate the importance of FDB035AN06A0-VB in high current and low voltage switching applications, where its low on-resistance and high current capability make it play a key role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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