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FDB031N08-VB Product details
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FDB031N08-VB Product Introduction
FDB031N08-VB is a high-performance N-channel MOSFET in a TO-263 package. It is designed for high current and medium voltage applications, with a drain-source voltage (VDS) of 60V, suitable for handling medium voltage environments. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent switching performance. The on-resistance (RDS(ON)) of FDB031N08-VB at VGS=10V is only 2.5mΩ, and it can handle a drain current (ID) of up to 270A. These features enable it to perform well in high-power and high-current applications, and can effectively improve the efficiency and reliability of the system.
FDB031N08-VB is a high-performance N-channel MOSFET in a TO-263 package. It is designed for high current and medium voltage applications, with a drain-source voltage (VDS) of 60V, suitable for handling medium voltage environments. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent switching performance. The on-resistance (RDS(ON)) of FDB031N08-VB at VGS=10V is only 2.5mΩ, and it can handle a drain current (ID) of up to 270A. These features enable it to perform well in high-power and high-current applications, and can effectively improve the efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The high current handling capability and low on-resistance of the FDB031N08-VB MOSFET make it excel in multiple fields and modules. The following are examples of this MOSFET in different applications:
1. **High Power Switching Power Supply (SMPS)**: In high power switching power supplies, the FDB031N08-VB is able to handle high current demands, and its 2.5mΩ on-resistance helps reduce power losses and improve power conversion efficiency. Suitable for high-efficiency power regulation and conversion circuits.
2. **Motor Drive**: In motor drive applications, the FDB031N08-VB is able to support currents up to 270A, making it ideal for the control and drive of high-power motors. Its low on-resistance and high current capability ensure the stability and efficiency of motor operation.
3. **Power Inverter**: In power inverters, such as solar inverters or industrial inverters, the FDB031N08-VB is capable of handling 60V voltage input, suitable for high current conversion applications. Its excellent switching performance and low power consumption help improve the overall efficiency and reliability of the system.
4. **High-efficiency Charger**: In battery chargers and power management systems, the FDB031N08-VB is able to provide efficient current handling capabilities, suitable for fast charging and high-efficiency power regulation. Its low on-resistance improves the efficiency of the charging process and reduces heat generation.
These application scenarios demonstrate the excellent performance of the FDB031N08-VB in high current and medium voltage environments, making it a key component in high-efficiency electronic systems.
The high current handling capability and low on-resistance of the FDB031N08-VB MOSFET make it excel in multiple fields and modules. The following are examples of this MOSFET in different applications:
1. **High Power Switching Power Supply (SMPS)**: In high power switching power supplies, the FDB031N08-VB is able to handle high current demands, and its 2.5mΩ on-resistance helps reduce power losses and improve power conversion efficiency. Suitable for high-efficiency power regulation and conversion circuits.
2. **Motor Drive**: In motor drive applications, the FDB031N08-VB is able to support currents up to 270A, making it ideal for the control and drive of high-power motors. Its low on-resistance and high current capability ensure the stability and efficiency of motor operation.
3. **Power Inverter**: In power inverters, such as solar inverters or industrial inverters, the FDB031N08-VB is capable of handling 60V voltage input, suitable for high current conversion applications. Its excellent switching performance and low power consumption help improve the overall efficiency and reliability of the system.
4. **High-efficiency Charger**: In battery chargers and power management systems, the FDB031N08-VB is able to provide efficient current handling capabilities, suitable for fast charging and high-efficiency power regulation. Its low on-resistance improves the efficiency of the charging process and reduces heat generation.
These application scenarios demonstrate the excellent performance of the FDB031N08-VB in high current and medium voltage environments, making it a key component in high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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