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FDA59N25-VB Product details
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Product Introduction
FDA59N25-VB is a single N-channel power MOSFET in a TO3P package. It has a drain-source voltage (VDS) of 250V and a gate voltage range (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 3.5V, and it uses Trench technology to provide low on-resistance (RDS(ON)). At a gate voltage of 10V, its on-resistance is 40mΩ and it can withstand a drain current (ID) of up to 60A. The design of the FDA59N25-VB makes it excel in medium voltage and high current applications.
FDA59N25-VB is a single N-channel power MOSFET in a TO3P package. It has a drain-source voltage (VDS) of 250V and a gate voltage range (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 3.5V, and it uses Trench technology to provide low on-resistance (RDS(ON)). At a gate voltage of 10V, its on-resistance is 40mΩ and it can withstand a drain current (ID) of up to 60A. The design of the FDA59N25-VB makes it excel in medium voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ@VGS=10V
- **Continuous drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ@VGS=10V
- **Continuous drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
FDA59N25-VB MOSFET is suitable for the following fields and modules due to its excellent current handling capability and low on-resistance:
1. **Power management and switching power supply**: In power management systems, FDA59N25-VB can effectively handle high current and medium voltage, and is widely used in switching power supplies and power conversion modules, providing efficient switching performance and stability.
2. **Motor drive**: This MOSFET is suitable for use in motor drive systems, can withstand high current loads, and provide reliable switching control. It is suitable for motor control modules that require high current and medium voltage.
3. **DC-DC converter**: In DC-DC converter applications, FDA59N25-VB can effectively control current, help achieve efficient voltage conversion, and reduce energy loss, and is suitable for high current and high power conversion applications.
4. **High power switching applications**: Suitable for high power switching applications that require high current and medium voltage, such as power amplifiers and power switches, providing efficient and reliable switching operations.
The Trench technology and lower on-resistance of FDA59N25-VB enable it to perform well in high current applications and provide reliable and efficient performance in a variety of medium voltage power and switching applications.
FDA59N25-VB MOSFET is suitable for the following fields and modules due to its excellent current handling capability and low on-resistance:
1. **Power management and switching power supply**: In power management systems, FDA59N25-VB can effectively handle high current and medium voltage, and is widely used in switching power supplies and power conversion modules, providing efficient switching performance and stability.
2. **Motor drive**: This MOSFET is suitable for use in motor drive systems, can withstand high current loads, and provide reliable switching control. It is suitable for motor control modules that require high current and medium voltage.
3. **DC-DC converter**: In DC-DC converter applications, FDA59N25-VB can effectively control current, help achieve efficient voltage conversion, and reduce energy loss, and is suitable for high current and high power conversion applications.
4. **High power switching applications**: Suitable for high power switching applications that require high current and medium voltage, such as power amplifiers and power switches, providing efficient and reliable switching operations.
The Trench technology and lower on-resistance of FDA59N25-VB enable it to perform well in high current applications and provide reliable and efficient performance in a variety of medium voltage power and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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