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FDA50N50-VB Product details
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FDA50N50-VB MOSFET Product Introduction
FDA50N50-VB is a high-performance single N-channel MOSFET in TO3P package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 60mΩ, and the maximum drain current (ID) can reach 47A. FDA50N50-VB uses SJ_Multi-EPI technology to optimize switching performance and thermal stability, making it ideal for high-voltage, high-power power management and power conversion applications.
FDA50N50-VB is a high-performance single N-channel MOSFET in TO3P package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 60mΩ, and the maximum drain current (ID) can reach 47A. FDA50N50-VB uses SJ_Multi-EPI technology to optimize switching performance and thermal stability, making it ideal for high-voltage, high-power power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High-voltage power converter**: FDA50N50-VB performs well in high-voltage power converters, especially in 600V voltage environments. Its low on-resistance (60mΩ) and high current handling capability (47A) enable it to efficiently and stably perform power conversion, improving the efficiency and performance of power converters.
2. **Industrial power management system**: In industrial power management systems, FDA50N50-VB can effectively manage and control high-voltage power supplies. Its high voltage tolerance and high current handling capabilities make it very suitable for high-power industrial applications, providing reliable power management solutions.
3. **Switching power supply**: FDA50N50-VB can achieve efficient switching operations in switching power supply applications. Its low on-resistance and high current handling capabilities enable it to cope with high-power switching requirements, reduce energy losses, and improve overall system efficiency.
4. **Electric Vehicle Charger**: In electric vehicle charger systems, FDA50N50-VB can meet high voltage and high current charging requirements. Its excellent switching performance and high current handling capability help improve charging efficiency and safety, and is suitable for high voltage charging environments of electric vehicles.
FDA50N50-VB MOSFET, with its high voltage tolerance, low on-resistance and high current handling capability, is suitable for demanding high voltage and high power applications, providing stable and reliable performance, and is an ideal choice for high voltage power management and power conversion.
1. **High-voltage power converter**: FDA50N50-VB performs well in high-voltage power converters, especially in 600V voltage environments. Its low on-resistance (60mΩ) and high current handling capability (47A) enable it to efficiently and stably perform power conversion, improving the efficiency and performance of power converters.
2. **Industrial power management system**: In industrial power management systems, FDA50N50-VB can effectively manage and control high-voltage power supplies. Its high voltage tolerance and high current handling capabilities make it very suitable for high-power industrial applications, providing reliable power management solutions.
3. **Switching power supply**: FDA50N50-VB can achieve efficient switching operations in switching power supply applications. Its low on-resistance and high current handling capabilities enable it to cope with high-power switching requirements, reduce energy losses, and improve overall system efficiency.
4. **Electric Vehicle Charger**: In electric vehicle charger systems, FDA50N50-VB can meet high voltage and high current charging requirements. Its excellent switching performance and high current handling capability help improve charging efficiency and safety, and is suitable for high voltage charging environments of electric vehicles.
FDA50N50-VB MOSFET, with its high voltage tolerance, low on-resistance and high current handling capability, is suitable for demanding high voltage and high power applications, providing stable and reliable performance, and is an ideal choice for high voltage power management and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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