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FDA38N30-VB Product details
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Product Introduction: FDA38N30-VB
FDA38N30-VB is a high-voltage N-channel MOSFET packaged in TO3P, designed for high voltage and high current applications. Its drain-source voltage (VDS) is 600V, suitable for high voltage operating environments. The gate-source voltage (VGS) of this MOSFET is ±30V, and the turn-on threshold voltage (Vth) is 3.5V. When VGS is 10V, its on-resistance (RDS(ON)) is 60mΩ and the drain current (ID) reaches 47A. FDA38N30-VB uses SJ_Multi-EPI technology to optimize power loss and thermal management to ensure reliability and efficiency in high voltage and high current applications.
FDA38N30-VB is a high-voltage N-channel MOSFET packaged in TO3P, designed for high voltage and high current applications. Its drain-source voltage (VDS) is 600V, suitable for high voltage operating environments. The gate-source voltage (VGS) of this MOSFET is ±30V, and the turn-on threshold voltage (Vth) is 3.5V. When VGS is 10V, its on-resistance (RDS(ON)) is 60mΩ and the drain current (ID) reaches 47A. FDA38N30-VB uses SJ_Multi-EPI technology to optimize power loss and thermal management to ensure reliability and efficiency in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
The high voltage and high current characteristics of the FDA38N30-VB MOSFET make it widely used in many fields:
1. **Switching Power Supply (SMPS)**: In switching power supply design, the FDA38N30-VB can handle voltages up to 600V and provide low on-resistance, suitable for high-efficiency power supply design. Its 47A drain current capability makes it particularly suitable for high-power applications.
2. **Motor Drive**: This MOSFET is suitable for motor drive systems that require high voltage and high current. Its high current handling capability and low on-resistance can support the stable operation of high-power motors and ensure reliability under high voltage conditions.
3. **Battery Management System (BMS)**: In battery management systems, the FDA38N30-VB provides effective high-voltage protection and switching capabilities, suitable for the management of high-voltage battery packs. Its high current capability and low on-resistance ensure the safety and efficiency of the battery system.
4. **Industrial Control Systems**: FDA38N30-VB can be used for high voltage switching applications in various industrial control systems, especially in scenarios where high voltage and high current need to be handled. Its excellent switching performance and high current handling capabilities make it an excellent performer in industrial automation and control systems.
These applications demonstrate the importance of FDA38N30-VB in high voltage and high power switching applications, where its high voltage and high current capabilities play a key role in multiple fields.
The high voltage and high current characteristics of the FDA38N30-VB MOSFET make it widely used in many fields:
1. **Switching Power Supply (SMPS)**: In switching power supply design, the FDA38N30-VB can handle voltages up to 600V and provide low on-resistance, suitable for high-efficiency power supply design. Its 47A drain current capability makes it particularly suitable for high-power applications.
2. **Motor Drive**: This MOSFET is suitable for motor drive systems that require high voltage and high current. Its high current handling capability and low on-resistance can support the stable operation of high-power motors and ensure reliability under high voltage conditions.
3. **Battery Management System (BMS)**: In battery management systems, the FDA38N30-VB provides effective high-voltage protection and switching capabilities, suitable for the management of high-voltage battery packs. Its high current capability and low on-resistance ensure the safety and efficiency of the battery system.
4. **Industrial Control Systems**: FDA38N30-VB can be used for high voltage switching applications in various industrial control systems, especially in scenarios where high voltage and high current need to be handled. Its excellent switching performance and high current handling capabilities make it an excellent performer in industrial automation and control systems.
These applications demonstrate the importance of FDA38N30-VB in high voltage and high power switching applications, where its high voltage and high current capabilities play a key role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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