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FDA33N25-VB Product details
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FDA33N25-VB Product Introduction
FDA33N25-VB is a high-performance N-channel MOSFET in a TO-3P package designed for medium and high power applications. This MOSFET can withstand a drain-source voltage (VDS) of up to 250V, making it suitable for handling medium and high voltage environments. FDA33N25-VB uses Trench technology, which can effectively reduce the on-resistance while improving switching efficiency. Its on-resistance (RDS(ON)) is only 40mΩ at VGS=10V, which can provide excellent current handling capability with a maximum drain current (ID) of 60A. This makes FDA33N25-VB very suitable for use in applications that require high current and higher voltage.
FDA33N25-VB is a high-performance N-channel MOSFET in a TO-3P package designed for medium and high power applications. This MOSFET can withstand a drain-source voltage (VDS) of up to 250V, making it suitable for handling medium and high voltage environments. FDA33N25-VB uses Trench technology, which can effectively reduce the on-resistance while improving switching efficiency. Its on-resistance (RDS(ON)) is only 40mΩ at VGS=10V, which can provide excellent current handling capability with a maximum drain current (ID) of 60A. This makes FDA33N25-VB very suitable for use in applications that require high current and higher voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO-3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
- **Package type**: TO-3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The high current capability and low on-resistance of the FDA33N25-VB MOSFET make it excellent in a variety of applications. The following are examples of the application of this MOSFET in different fields and modules:
1. **High-power switching power supply (SMPS)**: In high-power switching power supply design, the FDA33N25-VB can effectively handle a voltage input of 250V. Its low on-resistance (40mΩ) helps reduce power loss and improve system efficiency, making it suitable for high-efficiency power conversion and regulation.
2. **Motor drive**: In motor control and drive applications, the FDA33N25-VB can handle high current (60A) and is suitable for the control and drive of high-power motors. Especially in industrial equipment and high-power motor drive systems, it can provide stable current support and efficient switching performance.
3. **Power Inverter**: In power inverter applications, such as solar inverters and UPS (uninterruptible power supply) systems, the FDA33N25-VB is able to handle 250V input voltages to meet medium power requirements. Its low on-resistance and high current handling capabilities ensure system stability and efficiency.
4. **Power Management and Chargers**: In power management system and charger designs, the FDA33N25-VB is able to effectively manage higher voltages and currents, making it suitable for battery chargers and power conditioning modules. Its excellent switching performance and low power loss improve overall system efficiency and reliability.
These application scenarios demonstrate the FDA33N25-VB's strong capabilities in medium-to-high voltage and high current environments, making it a key component in high-performance electronic systems.
The high current capability and low on-resistance of the FDA33N25-VB MOSFET make it excellent in a variety of applications. The following are examples of the application of this MOSFET in different fields and modules:
1. **High-power switching power supply (SMPS)**: In high-power switching power supply design, the FDA33N25-VB can effectively handle a voltage input of 250V. Its low on-resistance (40mΩ) helps reduce power loss and improve system efficiency, making it suitable for high-efficiency power conversion and regulation.
2. **Motor drive**: In motor control and drive applications, the FDA33N25-VB can handle high current (60A) and is suitable for the control and drive of high-power motors. Especially in industrial equipment and high-power motor drive systems, it can provide stable current support and efficient switching performance.
3. **Power Inverter**: In power inverter applications, such as solar inverters and UPS (uninterruptible power supply) systems, the FDA33N25-VB is able to handle 250V input voltages to meet medium power requirements. Its low on-resistance and high current handling capabilities ensure system stability and efficiency.
4. **Power Management and Chargers**: In power management system and charger designs, the FDA33N25-VB is able to effectively manage higher voltages and currents, making it suitable for battery chargers and power conditioning modules. Its excellent switching performance and low power loss improve overall system efficiency and reliability.
These application scenarios demonstrate the FDA33N25-VB's strong capabilities in medium-to-high voltage and high current environments, making it a key component in high-performance electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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