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FDA20N50F-VB Product details
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Product Introduction
FDA20N50F-VB is a high-voltage single N-channel power MOSFET in a TO3P package. The device has a drain-source voltage (VDS) of 600V and can withstand a gate-source voltage (VGS) of up to ±30V. Its threshold voltage (Vth) is 3.5V and it uses Super Junction multi-epitaxial (SJ_Multi-EPI) technology, which provides stable performance and low on-resistance (RDS(ON)) in a high-voltage environment. At a gate voltage of 10V, the on-resistance is 190mΩ and the drain current (ID) is 20A. This makes the FDA20N50F-VB ideal for use in high voltage and medium current applications.
FDA20N50F-VB is a high-voltage single N-channel power MOSFET in a TO3P package. The device has a drain-source voltage (VDS) of 600V and can withstand a gate-source voltage (VGS) of up to ±30V. Its threshold voltage (Vth) is 3.5V and it uses Super Junction multi-epitaxial (SJ_Multi-EPI) technology, which provides stable performance and low on-resistance (RDS(ON)) in a high-voltage environment. At a gate voltage of 10V, the on-resistance is 190mΩ and the drain current (ID) is 20A. This makes the FDA20N50F-VB ideal for use in high voltage and medium current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super Junction Multi-Epi (SJ_Multi-EPI)
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super Junction Multi-Epi (SJ_Multi-EPI)
Domain and module applications：
Application fields and module examples
The FDA20N50F-VB MOSFET is suitable for the following fields and modules due to its high voltage tolerance and stable performance:
1. **High-voltage switch mode power supply (SMPS)**: In switch mode power supply systems that need to handle high voltages, the FDA20N50F-VB can provide reliable switching functions to help achieve efficient voltage conversion and energy management.
2. **Industrial inverter**: This MOSFET is suitable for the power conversion part of industrial inverters. It can handle voltages up to 600V and provide stable switching performance in inverter systems to ensure efficient operation of the system.
3. **Electric vehicle charging system**: Used in electric vehicle chargers, the FDA20N50F-VB can effectively switch current in high voltage environments, supporting the stable operation of the charging system. Despite its high on-resistance, it is still effective in many applications.
4. **High-voltage motor drive**: In high-voltage motor control systems, this MOSFET is capable of handling high voltage currents and is suitable for switching operations of motor drive and control modules, providing reliable current control.
The Super Junction technology and high voltage tolerance of the FDA20N50F-VB enable it to excel in these high-voltage, high-current application scenarios. Its stability and on-resistance provide good performance in practical applications, meeting the needs of high-voltage applications.
The FDA20N50F-VB MOSFET is suitable for the following fields and modules due to its high voltage tolerance and stable performance:
1. **High-voltage switch mode power supply (SMPS)**: In switch mode power supply systems that need to handle high voltages, the FDA20N50F-VB can provide reliable switching functions to help achieve efficient voltage conversion and energy management.
2. **Industrial inverter**: This MOSFET is suitable for the power conversion part of industrial inverters. It can handle voltages up to 600V and provide stable switching performance in inverter systems to ensure efficient operation of the system.
3. **Electric vehicle charging system**: Used in electric vehicle chargers, the FDA20N50F-VB can effectively switch current in high voltage environments, supporting the stable operation of the charging system. Despite its high on-resistance, it is still effective in many applications.
4. **High-voltage motor drive**: In high-voltage motor control systems, this MOSFET is capable of handling high voltage currents and is suitable for switching operations of motor drive and control modules, providing reliable current control.
The Super Junction technology and high voltage tolerance of the FDA20N50F-VB enable it to excel in these high-voltage, high-current application scenarios. Its stability and on-resistance provide good performance in practical applications, meeting the needs of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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