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FDA20N50_F109-VB Product details
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FDA20N50_F109-VB MOSFET Product Introduction
FDA20N50_F109-VB is a high voltage, high performance single N-channel MOSFET in TO3P package. Designed for high voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 190mΩ at a gate-source voltage of 10V, and it can withstand a maximum drain current (ID) of 20A. FDA20N50_F109-VB uses SJ_Multi-EPI technology to optimize switching performance and thermal stability, making it suitable for use in high voltage, high power power management and power conversion applications.
FDA20N50_F109-VB is a high voltage, high performance single N-channel MOSFET in TO3P package. Designed for high voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 190mΩ at a gate-source voltage of 10V, and it can withstand a maximum drain current (ID) of 20A. FDA20N50_F109-VB uses SJ_Multi-EPI technology to optimize switching performance and thermal stability, making it suitable for use in high voltage, high power power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **High-voltage power converter**: FDA20N50_F109-VB is suitable for high-voltage power converters, especially in power management and conversion applications requiring 600V voltage. Its high voltage tolerance and moderate on-resistance enable it to work efficiently and stably during power conversion.
2. **Industrial power management system**: In industrial power management systems, FDA20N50_F109-VB's high voltage tolerance and 20A current handling capability enable it to cope with the control and management needs of high-power power supplies. Its SJ_Multi-EPI technology ensures stability and reliability during long-term operation.
3. **Switching power supply**: This MOSFET performs well in switching power supply applications, especially in situations with high voltage and high power requirements. Its high voltage tolerance and low on-resistance enable it to effectively control switching operations, reduce power losses, and improve system efficiency.
4. **Electric vehicle charger**: In electric vehicle charger systems, FDA20N50_F109-VB can meet the charging requirements of high voltage and large current. Its high voltage capability and stable switching performance help improve charging efficiency and safety.
FDA20N50_F109-VB MOSFET can provide reliable performance and stable operation in these fields, meet the application requirements of high voltage and high power, and is an ideal choice for high voltage power management and power conversion.
1. **High-voltage power converter**: FDA20N50_F109-VB is suitable for high-voltage power converters, especially in power management and conversion applications requiring 600V voltage. Its high voltage tolerance and moderate on-resistance enable it to work efficiently and stably during power conversion.
2. **Industrial power management system**: In industrial power management systems, FDA20N50_F109-VB's high voltage tolerance and 20A current handling capability enable it to cope with the control and management needs of high-power power supplies. Its SJ_Multi-EPI technology ensures stability and reliability during long-term operation.
3. **Switching power supply**: This MOSFET performs well in switching power supply applications, especially in situations with high voltage and high power requirements. Its high voltage tolerance and low on-resistance enable it to effectively control switching operations, reduce power losses, and improve system efficiency.
4. **Electric vehicle charger**: In electric vehicle charger systems, FDA20N50_F109-VB can meet the charging requirements of high voltage and large current. Its high voltage capability and stable switching performance help improve charging efficiency and safety.
FDA20N50_F109-VB MOSFET can provide reliable performance and stable operation in these fields, meet the application requirements of high voltage and high power, and is an ideal choice for high voltage power management and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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