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FDA18N50-VB Product details
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Product Introduction: FDA18N50-VB
FDA18N50-VB is a high-voltage N-channel MOSFET in TO3P package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 600V, making it suitable for use in high voltage environments. The gate-source voltage (VGS) of this MOSFET is ±30V, and the turn-on threshold voltage (Vth) is 3.5V. At VGS of 10V, the on-resistance (RDS(ON)) is 190mΩ and the drain current (ID) is 20A. FDA18N50-VB uses SJ_Multi-EPI technology to optimize power loss and thermal management, ensuring reliability and stability in high voltage switching applications.
FDA18N50-VB is a high-voltage N-channel MOSFET in TO3P package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 600V, making it suitable for use in high voltage environments. The gate-source voltage (VGS) of this MOSFET is ±30V, and the turn-on threshold voltage (Vth) is 3.5V. At VGS of 10V, the on-resistance (RDS(ON)) is 190mΩ and the drain current (ID) is 20A. FDA18N50-VB uses SJ_Multi-EPI technology to optimize power loss and thermal management, ensuring reliability and stability in high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Application fields and modules
FDA18N50-VB MOSFET is widely used in the following fields and modules due to its high voltage handling capability and moderate on-resistance:
1. **Switching Power Supply (SMPS)**: In the switching power supply system, FDA18N50-VB can handle voltages up to 600V and provide stable switching capabilities. Its lower on-resistance and higher drain current make it suitable for high-efficiency power supply designs, especially in scenarios requiring high voltage and medium current.
2. **Motor Drive**: This MOSFET is suitable for motor drive systems and can work stably in high voltage environments. Its 20A drain current capability is suitable for handling medium-power motors and ensuring reliable operation of the motors.
3. **Battery Management System (BMS)**:FDA18N50-VB provides high voltage protection and switching capabilities in battery management systems. It is suitable for the protection of high-voltage battery packs, ensuring the safety and reliability of battery systems under various working conditions.
4. **Industrial Control Systems**: In industrial control systems, the FDA18N50-VB is able to handle high voltage switching requirements and is suitable for industrial applications that require high voltage and medium current control. Its excellent switching performance and reliability make it an excellent performer in industrial automation and control.
These applications demonstrate the importance of the FDA18N50-VB in high voltage, high power switching applications, where its high voltage capability and moderate on-resistance make it play a key role in multiple fields.
FDA18N50-VB MOSFET is widely used in the following fields and modules due to its high voltage handling capability and moderate on-resistance:
1. **Switching Power Supply (SMPS)**: In the switching power supply system, FDA18N50-VB can handle voltages up to 600V and provide stable switching capabilities. Its lower on-resistance and higher drain current make it suitable for high-efficiency power supply designs, especially in scenarios requiring high voltage and medium current.
2. **Motor Drive**: This MOSFET is suitable for motor drive systems and can work stably in high voltage environments. Its 20A drain current capability is suitable for handling medium-power motors and ensuring reliable operation of the motors.
3. **Battery Management System (BMS)**:FDA18N50-VB provides high voltage protection and switching capabilities in battery management systems. It is suitable for the protection of high-voltage battery packs, ensuring the safety and reliability of battery systems under various working conditions.
4. **Industrial Control Systems**: In industrial control systems, the FDA18N50-VB is able to handle high voltage switching requirements and is suitable for industrial applications that require high voltage and medium current control. Its excellent switching performance and reliability make it an excellent performer in industrial automation and control.
These applications demonstrate the importance of the FDA18N50-VB in high voltage, high power switching applications, where its high voltage capability and moderate on-resistance make it play a key role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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