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FDA16N50_F109-VB Product details
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FDA16N50_F109-VB Product Introduction
FDA16N50_F109-VB is a high-voltage N-channel MOSFET in a TO-3P package. Designed for high-voltage applications, this MOSFET has a drain-source voltage (VDS) of up to 600V, making it suitable for handling high-voltage environments. FDA16N50_F109-VB uses Super Junction Multi-Epi (SJ_Multi-EPI) technology, which can increase the current handling capability of the device while reducing the on-resistance. Its maximum drain current (ID) is 15A and the on-resistance (RDS(ON)) is 280mΩ at VGS=10V. This makes FDA16N50_F109-VB very suitable for applications requiring high voltage and medium current.
FDA16N50_F109-VB is a high-voltage N-channel MOSFET in a TO-3P package. Designed for high-voltage applications, this MOSFET has a drain-source voltage (VDS) of up to 600V, making it suitable for handling high-voltage environments. FDA16N50_F109-VB uses Super Junction Multi-Epi (SJ_Multi-EPI) technology, which can increase the current handling capability of the device while reducing the on-resistance. Its maximum drain current (ID) is 15A and the on-resistance (RDS(ON)) is 280mΩ at VGS=10V. This makes FDA16N50_F109-VB very suitable for applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Package type**: TO-3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Package type**: TO-3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Applications and Modules
FDA16N50_F109-VB MOSFET is widely used in multiple high voltage and medium power electronic systems due to its high withstand voltage and moderate current handling capability. The following are examples of the application of this MOSFET in different fields and modules:
1. **High Voltage Switching Power Supply (SMPS)**:FDA16N50_F109-VB is well suited for high voltage switching power supply designs. Its 600V drain-source voltage is able to handle high voltage inputs, while its 280mΩ on-resistance is able to balance power losses to a certain extent, making it an ideal choice for efficient power conversion and regulation circuits.
2. **Power Inverter**: In power inverter applications,FDA16N50_F109-VB is able to stably handle 600V input voltage. Its 15A drain current makes it suitable for medium power inverter systems such as solar inverters and industrial power inverters.
3. **High-voltage lighting control**: In high-voltage lighting systems, such as high-pressure sodium lamps or metal halide lamp controls, FDA16N50_F109-VB is able to provide reliable high-voltage switching performance. Its high withstand voltage and moderate on-resistance make it suitable for handling high-voltage switching tasks in lighting systems.
4. **Power management system**: In power management systems, such as battery management systems and chargers, FDA16N50_F109-VB is able to effectively handle high voltage and medium current applications, ensuring system stability and reliability.
These application scenarios demonstrate the powerful capabilities of FDA16N50_F109-VB in high voltage and medium power environments, making it a key component in high-efficiency electronic systems.
FDA16N50_F109-VB MOSFET is widely used in multiple high voltage and medium power electronic systems due to its high withstand voltage and moderate current handling capability. The following are examples of the application of this MOSFET in different fields and modules:
1. **High Voltage Switching Power Supply (SMPS)**:FDA16N50_F109-VB is well suited for high voltage switching power supply designs. Its 600V drain-source voltage is able to handle high voltage inputs, while its 280mΩ on-resistance is able to balance power losses to a certain extent, making it an ideal choice for efficient power conversion and regulation circuits.
2. **Power Inverter**: In power inverter applications,FDA16N50_F109-VB is able to stably handle 600V input voltage. Its 15A drain current makes it suitable for medium power inverter systems such as solar inverters and industrial power inverters.
3. **High-voltage lighting control**: In high-voltage lighting systems, such as high-pressure sodium lamps or metal halide lamp controls, FDA16N50_F109-VB is able to provide reliable high-voltage switching performance. Its high withstand voltage and moderate on-resistance make it suitable for handling high-voltage switching tasks in lighting systems.
4. **Power management system**: In power management systems, such as battery management systems and chargers, FDA16N50_F109-VB is able to effectively handle high voltage and medium current applications, ensuring system stability and reliability.
These application scenarios demonstrate the powerful capabilities of FDA16N50_F109-VB in high voltage and medium power environments, making it a key component in high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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