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FCU900N60Z-VB Product details
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FCU900N60Z-VB MOSFET Product Introduction
FCU900N60Z-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 650V, and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) is 950mΩ, and it can withstand a maximum drain current (ID) of 5A. FCU900N60Z-VB uses SJ_Multi-EPI technology to optimize switching performance and thermal stability, and is suitable for high voltage, high efficiency power management and power conversion applications.
FCU900N60Z-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 650V, and a gate-source voltage (VGS) of ±30V. Its threshold voltage (Vth) is 3.5V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) is 950mΩ, and it can withstand a maximum drain current (ID) of 5A. FCU900N60Z-VB uses SJ_Multi-EPI technology to optimize switching performance and thermal stability, and is suitable for high voltage, high efficiency power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Application Fields and Modules
1. **Power Converter**: FCU900N60Z-VB is suitable for various power converters, especially in high voltage and high power application scenarios. Its 650V withstand voltage capability and relatively high on-resistance enable it to handle power conversion tasks in high voltage environments.
2. **Industrial Power Management**: In industrial power management systems, FCU900N60Z-VB is able to effectively control and manage high voltage power supplies. Its high withstand voltage and SJ_Multi-EPI technology ensure long-term stable performance and is suitable for high voltage and high current applications.
3. **High Voltage Lighting System**: FCU900N60Z-VB performs well in high voltage lighting systems such as high pressure sodium lamps and LED drivers. Its high voltage tolerance enables it to provide reliable switching control and adapt to high voltage working environments.
4. **Electric Vehicle Charger**: In electric vehicle chargers, the FCU900N60Z-VB is able to meet the high voltage and medium current charging requirements. Despite its low maximum drain current, its high withstand voltage characteristics and reliability still make it suitable for specific applications in electric vehicle charging systems.
The FCU900N60Z-VB MOSFET is able to provide reliable performance and stable switching control in these application areas, meeting application scenarios with high voltage and high power requirements.
1. **Power Converter**: FCU900N60Z-VB is suitable for various power converters, especially in high voltage and high power application scenarios. Its 650V withstand voltage capability and relatively high on-resistance enable it to handle power conversion tasks in high voltage environments.
2. **Industrial Power Management**: In industrial power management systems, FCU900N60Z-VB is able to effectively control and manage high voltage power supplies. Its high withstand voltage and SJ_Multi-EPI technology ensure long-term stable performance and is suitable for high voltage and high current applications.
3. **High Voltage Lighting System**: FCU900N60Z-VB performs well in high voltage lighting systems such as high pressure sodium lamps and LED drivers. Its high voltage tolerance enables it to provide reliable switching control and adapt to high voltage working environments.
4. **Electric Vehicle Charger**: In electric vehicle chargers, the FCU900N60Z-VB is able to meet the high voltage and medium current charging requirements. Despite its low maximum drain current, its high withstand voltage characteristics and reliability still make it suitable for specific applications in electric vehicle charging systems.
The FCU900N60Z-VB MOSFET is able to provide reliable performance and stable switching control in these application areas, meeting application scenarios with high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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