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FCPF20N60T-VB Product details
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FCPF20N60T-VB Product Introduction
FCPF20N60T-VB is a high-voltage N-channel MOSFET in a TO-220F package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) capability of 650V and is suitable for electronic circuits that need to handle high voltages. This MOSFET uses advanced Super Junction (Super Junction) multi-epitaxial (SJ_Multi-EPI) technology, which provides a relatively low on-resistance (RDS(ON)), which helps to improve the current handling capability and overall efficiency of the device. Its 20A drain current (ID) enables it to perform well in high current applications, effectively manage high power loads, and ensure system stability and reliability.
FCPF20N60T-VB is a high-voltage N-channel MOSFET in a TO-220F package, designed for high voltage and high power applications. It has a drain-source voltage (VDS) capability of 650V and is suitable for electronic circuits that need to handle high voltages. This MOSFET uses advanced Super Junction (Super Junction) multi-epitaxial (SJ_Multi-EPI) technology, which provides a relatively low on-resistance (RDS(ON)), which helps to improve the current handling capability and overall efficiency of the device. Its 20A drain current (ID) enables it to perform well in high current applications, effectively manage high power loads, and ensure system stability and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO-220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Package type**: TO-220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Applications and modules
FCPF20N60T-VB MOSFET performs well in multiple high voltage and high power applications, mainly suitable for the following areas:
1. **High voltage switch mode power supply (SMPS)**: In high voltage switch mode power supply design, FCPF20N60T-VB can handle voltages up to 650V. Its low on-resistance (160mΩ) effectively reduces power loss, improves the efficiency and stability of the power system, and is very suitable for high-efficiency power conversion and power management.
2. **Industrial motor drive**: In industrial motor drive systems, this MOSFET provides reliable high voltage switching capability, capable of handling currents up to 20A, ensuring the stability and reliability of high power motor control and drive. Suitable for a variety of industrial automation and control systems.
3. **Inverters and converters**: FCPF20N60T-VB is particularly suitable for use in power inverters and other power conversion modules. It can work stably in high voltage and high power environments, improve system reliability and performance, and is widely used in solar inverters and battery management systems.
4. **High-power lighting control**: In high-power LED drivers and lighting control systems, FCPF20N60T-VB can effectively manage high current and high voltage, optimizing the energy efficiency and stability of the lighting system. This makes it an important component in high-power lighting solutions.
These application scenarios demonstrate the excellent performance of FCPF20N60T-VB in handling high voltage and high power environments, making it a key component in a variety of high-efficiency electronic devices.
FCPF20N60T-VB MOSFET performs well in multiple high voltage and high power applications, mainly suitable for the following areas:
1. **High voltage switch mode power supply (SMPS)**: In high voltage switch mode power supply design, FCPF20N60T-VB can handle voltages up to 650V. Its low on-resistance (160mΩ) effectively reduces power loss, improves the efficiency and stability of the power system, and is very suitable for high-efficiency power conversion and power management.
2. **Industrial motor drive**: In industrial motor drive systems, this MOSFET provides reliable high voltage switching capability, capable of handling currents up to 20A, ensuring the stability and reliability of high power motor control and drive. Suitable for a variety of industrial automation and control systems.
3. **Inverters and converters**: FCPF20N60T-VB is particularly suitable for use in power inverters and other power conversion modules. It can work stably in high voltage and high power environments, improve system reliability and performance, and is widely used in solar inverters and battery management systems.
4. **High-power lighting control**: In high-power LED drivers and lighting control systems, FCPF20N60T-VB can effectively manage high current and high voltage, optimizing the energy efficiency and stability of the lighting system. This makes it an important component in high-power lighting solutions.
These application scenarios demonstrate the excellent performance of FCPF20N60T-VB in handling high voltage and high power environments, making it a key component in a variety of high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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