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FCPF190N60-VB Product details
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Product Introduction
FCPF190N60-VB is a high voltage, high performance single N-channel power MOSFET designed in TO220F package. This MOSFET has a drain-source breakdown voltage (VDS) of 650V and a continuous drain current (ID) of 20A, suitable for applications requiring high voltage and high power. It uses SJ_Multi-EPI (super junction multi-epitaxial) technology, has low on-resistance (RDS(ON)) and excellent current carrying capacity, and can provide stable performance under various complex and harsh working conditions.
FCPF190N60-VB is a high voltage, high performance single N-channel power MOSFET designed in TO220F package. This MOSFET has a drain-source breakdown voltage (VDS) of 650V and a continuous drain current (ID) of 20A, suitable for applications requiring high voltage and high power. It uses SJ_Multi-EPI (super junction multi-epitaxial) technology, has low on-resistance (RDS(ON)) and excellent current carrying capacity, and can provide stable performance under various complex and harsh working conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
The high withstand voltage and excellent current carrying capacity of FCPF190N60-VB MOSFET make it particularly suitable for various demanding power electronic applications. Here are some typical application fields and modules:
1. **Power converter**: In DC-DC converters and AC-DC power conversion modules, FCPF190N60-VB can handle high voltage inputs and improve overall conversion efficiency and reduce power consumption through its low on-resistance.
2. **Motor drive system**: This MOSFET is suitable for electric vehicles, power tools, and various industrial motor drive systems. It can operate stably under high current conditions to ensure the reliability and efficiency of the motor.
3. **Inverter**: In solar photovoltaic inverters and UPS (uninterruptible power supply) systems, FCPF190N60-VB provides high voltage withstand capability, which helps to effectively convert DC power into AC power, maintaining system stability and efficient operation.
4. **Power Amplifier**: Due to its high voltage and high current handling capabilities, the FCPF190N60-VB is suitable for the power supply section of high power amplifiers, providing stable power output in audio equipment and communication equipment.
In summary, the FCPF190N60-VB MOSFET is able to provide excellent performance in a variety of high voltage and high power applications, suitable for power management, motor control, inverters, power amplifiers and other fields.
The high withstand voltage and excellent current carrying capacity of FCPF190N60-VB MOSFET make it particularly suitable for various demanding power electronic applications. Here are some typical application fields and modules:
1. **Power converter**: In DC-DC converters and AC-DC power conversion modules, FCPF190N60-VB can handle high voltage inputs and improve overall conversion efficiency and reduce power consumption through its low on-resistance.
2. **Motor drive system**: This MOSFET is suitable for electric vehicles, power tools, and various industrial motor drive systems. It can operate stably under high current conditions to ensure the reliability and efficiency of the motor.
3. **Inverter**: In solar photovoltaic inverters and UPS (uninterruptible power supply) systems, FCPF190N60-VB provides high voltage withstand capability, which helps to effectively convert DC power into AC power, maintaining system stability and efficient operation.
4. **Power Amplifier**: Due to its high voltage and high current handling capabilities, the FCPF190N60-VB is suitable for the power supply section of high power amplifiers, providing stable power output in audio equipment and communication equipment.
In summary, the FCPF190N60-VB MOSFET is able to provide excellent performance in a variety of high voltage and high power applications, suitable for power management, motor control, inverters, power amplifiers and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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