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FCPF16N60NT-VB Product details
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1. FCPF16N60NT-VB Product Introduction
FCPF16N60NT-VB is a high-voltage, high-current N-channel power MOSFET in TO220F package. It utilizes advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology to achieve excellent voltage resistance and conduction performance. The MOSFET has a voltage resistance of 650V, a maximum continuous drain current of 20A, and a low on-resistance of 160mΩ (at VGS=10V). This design enables it to perform well in high-power switching applications and is suitable for power management and electronic devices that need to handle high voltage and high current.
FCPF16N60NT-VB is a high-voltage, high-current N-channel power MOSFET in TO220F package. It utilizes advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology to achieve excellent voltage resistance and conduction performance. The MOSFET has a voltage resistance of 650V, a maximum continuous drain current of 20A, and a low on-resistance of 160mΩ (at VGS=10V). This design enables it to perform well in high-power switching applications and is suitable for power management and electronic devices that need to handle high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FCPF16N60NT-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
3. Application fields and module examples of FCPF16N60NT-VB
FCPF16N60NT-VB is very suitable for application in the following fields and modules due to its high withstand voltage, high current and low on-resistance:
1. **Switching power supply (SMPS)**: This MOSFET can be used as a high-voltage switch tube to achieve efficient energy conversion in the switching power supply, especially in high-power or industrial-grade power modules, to ensure stable voltage output and reduce switching losses.
2. **Electric vehicle charger**: In electric vehicle chargers, FCPF16N60NT-VB can handle high-power charging requirements, provide stable and efficient charging performance, and is suitable for various electric vehicle charging systems.
3. **Industrial power system**: This MOSFET can be used as a switching component in industrial power systems, and can work stably under high voltage and high current environments to ensure the reliability and efficiency of the power system.
4. **LED Driver**: In high-power LED driver applications, FCPF16N60NT-VB can be used as a switch tube to improve the efficiency of LED drivers, reduce power consumption and optimize the performance of LED light sources.
5. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can be used for efficient power management, helping to provide reliable backup power in the event of a power outage, ensuring system continuity and stability.
Overall, the high voltage and high current characteristics of FCPF16N60NT-VB enable it to perform well in multiple high-power applications, providing an ideal solution for power management and high-power switch control.
FCPF16N60NT-VB is very suitable for application in the following fields and modules due to its high withstand voltage, high current and low on-resistance:
1. **Switching power supply (SMPS)**: This MOSFET can be used as a high-voltage switch tube to achieve efficient energy conversion in the switching power supply, especially in high-power or industrial-grade power modules, to ensure stable voltage output and reduce switching losses.
2. **Electric vehicle charger**: In electric vehicle chargers, FCPF16N60NT-VB can handle high-power charging requirements, provide stable and efficient charging performance, and is suitable for various electric vehicle charging systems.
3. **Industrial power system**: This MOSFET can be used as a switching component in industrial power systems, and can work stably under high voltage and high current environments to ensure the reliability and efficiency of the power system.
4. **LED Driver**: In high-power LED driver applications, FCPF16N60NT-VB can be used as a switch tube to improve the efficiency of LED drivers, reduce power consumption and optimize the performance of LED light sources.
5. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can be used for efficient power management, helping to provide reliable backup power in the event of a power outage, ensuring system continuity and stability.
Overall, the high voltage and high current characteristics of FCPF16N60NT-VB enable it to perform well in multiple high-power applications, providing an ideal solution for power management and high-power switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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