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FCPF11N60T-VB Product details
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Product Introduction
FCPF11N60T-VB is a single N-channel power MOSFET in a TO220F package. It has a breakdown voltage (VDS) of 650V, a gate voltage range (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The MOSFET has an on-resistance (RDS(ON)) of 320mΩ @VGS=10V and can withstand a drain current (ID) of up to 20A. It uses planar technology and is suitable for a variety of high-voltage and high-current applications. MOSFETs of this technology provide stable performance and reliable operation, and although its on-resistance is higher than some new technologies, it can still work effectively in many standard applications.
FCPF11N60T-VB is a single N-channel power MOSFET in a TO220F package. It has a breakdown voltage (VDS) of 650V, a gate voltage range (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The MOSFET has an on-resistance (RDS(ON)) of 320mΩ @VGS=10V and can withstand a drain current (ID) of up to 20A. It uses planar technology and is suitable for a variety of high-voltage and high-current applications. MOSFETs of this technology provide stable performance and reliable operation, and although its on-resistance is higher than some new technologies, it can still work effectively in many standard applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Plannar technology
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Plannar technology
Domain and module applications：
Application fields and module examples
FCPF11N60T-VB MOSFET is suitable for the following fields and modules due to its high voltage and moderate current handling capabilities:
1. **Switching Power Supply (SMPS)**: Used in high voltage switching power supply systems, this MOSFET can handle voltages up to 650V and is suitable for high voltage switches and control modules. Although its on-resistance is higher, it can still effectively provide switching functions in high voltage applications.
2. **Inverter System**: In solar inverters or other high voltage inverters, this MOSFET can be used in the power conversion stage to handle high voltage inputs and ensure stable operation of the inverter.
3. **Electric Vehicle Charger**: Suitable for the high voltage part of electric vehicle chargers, it can withstand high voltages and provide stable switching performance. Although it is not as good as some new MOSFETs in terms of on-resistance, it is still effective in many charging applications.
4. **Industrial Motor Drive**: In industrial motor control systems, this MOSFET can provide stable switching performance and is suitable for use in motor drive and control modules. Although the on-resistance is high, it can still meet the needs for some applications.
The application scenarios of FCPF11N60T-VB are mainly concentrated in environments that require high voltage support and relatively high current. Although its planar technology is not as good as new technologies in some high-efficiency applications, it still performs well in terms of stability and reliability.
FCPF11N60T-VB MOSFET is suitable for the following fields and modules due to its high voltage and moderate current handling capabilities:
1. **Switching Power Supply (SMPS)**: Used in high voltage switching power supply systems, this MOSFET can handle voltages up to 650V and is suitable for high voltage switches and control modules. Although its on-resistance is higher, it can still effectively provide switching functions in high voltage applications.
2. **Inverter System**: In solar inverters or other high voltage inverters, this MOSFET can be used in the power conversion stage to handle high voltage inputs and ensure stable operation of the inverter.
3. **Electric Vehicle Charger**: Suitable for the high voltage part of electric vehicle chargers, it can withstand high voltages and provide stable switching performance. Although it is not as good as some new MOSFETs in terms of on-resistance, it is still effective in many charging applications.
4. **Industrial Motor Drive**: In industrial motor control systems, this MOSFET can provide stable switching performance and is suitable for use in motor drive and control modules. Although the on-resistance is high, it can still meet the needs for some applications.
The application scenarios of FCPF11N60T-VB are mainly concentrated in environments that require high voltage support and relatively high current. Although its planar technology is not as good as new technologies in some high-efficiency applications, it still performs well in terms of stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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