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FCPF11N60NT-VB Product details
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FCPF11N60NT-VB Product Introduction
FCPF11N60NT-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage switching applications. The MOSFET supports drain-source voltage (VDS) up to 650V and has a gate-source voltage (VGS) tolerance of ±30V. Its threshold voltage (Vth) is 3.5V. Due to the use of Plannar technology, the device is stable under high voltage conditions, but its on-resistance (RDS(ON) is 320mΩ @ VGS = 10V) is relatively high. The maximum drain current (ID) is 20A, suitable for applications that need to handle high voltage and medium current.
FCPF11N60NT-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage switching applications. The MOSFET supports drain-source voltage (VDS) up to 650V and has a gate-source voltage (VGS) tolerance of ±30V. Its threshold voltage (Vth) is 3.5V. Due to the use of Plannar technology, the device is stable under high voltage conditions, but its on-resistance (RDS(ON) is 320mΩ @ VGS = 10V) is relatively high. The maximum drain current (ID) is 20A, suitable for applications that need to handle high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FCPF11N60NT-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Operating temperature range**: -55°C ~ 150°C
- **Number of package pins**: 3 pins
- **Package dimensions**: Standard TO220F Package size
- **Switching speed**: Medium switching speed, suitable for various applications
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Operating temperature range**: -55°C ~ 150°C
- **Number of package pins**: 3 pins
- **Package dimensions**: Standard TO220F Package size
- **Switching speed**: Medium switching speed, suitable for various applications
Domain and module applications：
Applications and Modules
1. **High-voltage Switching Power Supply (SMPS)**: The high drain-source voltage of FCPF11N60NT-VB makes it suitable for high-voltage switching power supply modules. Despite its high on-resistance, this MOSFET still provides reliable performance for switching power supply applications that require high voltage and medium current, especially in stable power management and control.
2. **Industrial Control Systems**: In industrial control systems, especially those involving high voltage scenarios such as motor control and power amplifiers, the high voltage withstand capability and medium current handling capability of this MOSFET make it a suitable choice.
3. **Household Appliances**: FCPF11N60NT-VB is also suitable for high-voltage household appliances such as electric heating appliances, microwave ovens, etc., which require switching operations under high voltage conditions. Despite the high on-resistance, reliability and voltage withstand capability are more important for these applications.
4. **Power Converters**: In power converters, especially when handling high voltages, the FCPF11N60NT-VB can effectively handle high voltage switching tasks. Its stable high voltage performance and moderate drain current capability make it suitable for a variety of power conversion applications.
5. **Power Amplifier**: In power amplifier designs that require high voltage and medium current, this MOSFET can provide sufficient current handling capability and voltage resistance to ensure the stability and reliability of the amplifier under high voltage operation.
1. **High-voltage Switching Power Supply (SMPS)**: The high drain-source voltage of FCPF11N60NT-VB makes it suitable for high-voltage switching power supply modules. Despite its high on-resistance, this MOSFET still provides reliable performance for switching power supply applications that require high voltage and medium current, especially in stable power management and control.
2. **Industrial Control Systems**: In industrial control systems, especially those involving high voltage scenarios such as motor control and power amplifiers, the high voltage withstand capability and medium current handling capability of this MOSFET make it a suitable choice.
3. **Household Appliances**: FCPF11N60NT-VB is also suitable for high-voltage household appliances such as electric heating appliances, microwave ovens, etc., which require switching operations under high voltage conditions. Despite the high on-resistance, reliability and voltage withstand capability are more important for these applications.
4. **Power Converters**: In power converters, especially when handling high voltages, the FCPF11N60NT-VB can effectively handle high voltage switching tasks. Its stable high voltage performance and moderate drain current capability make it suitable for a variety of power conversion applications.
5. **Power Amplifier**: In power amplifier designs that require high voltage and medium current, this MOSFET can provide sufficient current handling capability and voltage resistance to ensure the stability and reliability of the amplifier under high voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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