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FCPF11N60F-VB Product details
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FCPF11N60F-VB MOSFET Product Introduction
FCPF11N60F-VB is a high voltage, high withstand voltage single N-channel MOSFET in TO220F package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 320mΩ when the gate-source voltage is 10V, and it can withstand a maximum drain current (ID) of 20A. FCPF11N60F-VB uses Plannar technology, which enables it to have stable switching performance and low switching losses under high voltage conditions, suitable for various high voltage applications.
FCPF11N60F-VB is a high voltage, high withstand voltage single N-channel MOSFET in TO220F package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 320mΩ when the gate-source voltage is 10V, and it can withstand a maximum drain current (ID) of 20A. FCPF11N60F-VB uses Plannar technology, which enables it to have stable switching performance and low switching losses under high voltage conditions, suitable for various high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Plannar
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Plannar
Domain and module applications：
Applications and modules
1. **High-voltage power converter**: FCPF11N60F-VB is ideal for high-voltage power converters, especially in applications that require high withstand voltage and stable switching performance. Its 650V drain-source voltage ensures that it can handle power requirements in high-voltage environments.
2. **Industrial power management**: In industrial power management systems, the high withstand voltage characteristics and reliability of FCPF11N60F-VB make it an ideal choice. It can handle large currents and adapt to the control and management needs of high-voltage power supplies.
3. **Lighting drive circuit**: This MOSFET can also be used in high-voltage lighting systems, such as high-voltage sodium lamps or LED drive circuits. Its high voltage tolerance enables it to operate stably under high voltage conditions, providing reliable lighting control.
4. **Electric vehicle charger**: In electric vehicle chargers, FCPF11N60F-VB is able to cope with high voltage and high current charging requirements. Its high withstand voltage and stable performance help improve charging efficiency and ensure the safety and reliability of the charging process.
FCPF11N60F-VB MOSFET plays a key role in these applications, providing efficient and reliable power management and switch control solutions to meet high voltage and high power requirements.
1. **High-voltage power converter**: FCPF11N60F-VB is ideal for high-voltage power converters, especially in applications that require high withstand voltage and stable switching performance. Its 650V drain-source voltage ensures that it can handle power requirements in high-voltage environments.
2. **Industrial power management**: In industrial power management systems, the high withstand voltage characteristics and reliability of FCPF11N60F-VB make it an ideal choice. It can handle large currents and adapt to the control and management needs of high-voltage power supplies.
3. **Lighting drive circuit**: This MOSFET can also be used in high-voltage lighting systems, such as high-voltage sodium lamps or LED drive circuits. Its high voltage tolerance enables it to operate stably under high voltage conditions, providing reliable lighting control.
4. **Electric vehicle charger**: In electric vehicle chargers, FCPF11N60F-VB is able to cope with high voltage and high current charging requirements. Its high withstand voltage and stable performance help improve charging efficiency and ensure the safety and reliability of the charging process.
FCPF11N60F-VB MOSFET plays a key role in these applications, providing efficient and reliable power management and switch control solutions to meet high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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