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FCH47N60-VB Product details
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FCH47N60-VB Product Introduction
FCH47N60-VB is a high-performance N-channel MOSFET in TO-247 package, designed for high-voltage applications. This MOSFET has a drain-source voltage capability of 650V, suitable for high-voltage operating environments. It uses Super Junction (SJ_Multi-EPI) technology, which ensures high performance and reliability of the device while providing low on-resistance and high conductivity. FCH47N60-VB excels in current carrying capacity, with a drain current capability of up to 47A, suitable for applications requiring high power and high efficiency.
FCH47N60-VB is a high-performance N-channel MOSFET in TO-247 package, designed for high-voltage applications. This MOSFET has a drain-source voltage capability of 650V, suitable for high-voltage operating environments. It uses Super Junction (SJ_Multi-EPI) technology, which ensures high performance and reliability of the device while providing low on-resistance and high conductivity. FCH47N60-VB excels in current carrying capacity, with a drain current capability of up to 47A, suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO-247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Package type**: TO-247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Applications and modules
The FCH47N60-VB MOSFET is suitable for a variety of high-power and high-efficiency applications due to its high withstand voltage and low on-resistance. Here are some of the main application scenarios:
1. **Switching Power Supply (SMPS)**: The FCH47N60-VB MOSFET can effectively handle high voltage and high current in the switching power supply module, improving the efficiency and stability of the overall system. Its low on-resistance enables it to effectively reduce energy loss under high load.
2. **Motor Drive**: In industrial motor drive systems, the FCH47N60-VB can provide reliable high-voltage switching performance, suitable for high-power motor control and drive applications, ensuring high efficiency and long life of the system.
3. **Power Inverter**: This MOSFET performs well in solar inverters and other power converters, and can operate stably in high voltage and high power environments, improving the overall efficiency of the system.
4. **High-power lighting control**: In high-power LED drivers and other lighting systems, the FCH47N60-VB can effectively manage high current and high voltage, optimize lighting effects and improve energy efficiency.
These application areas demonstrate the excellent performance of the FCH47N60-VB in high-voltage and high-power environments, making it an ideal choice for a variety of high-efficiency electronic devices.
The FCH47N60-VB MOSFET is suitable for a variety of high-power and high-efficiency applications due to its high withstand voltage and low on-resistance. Here are some of the main application scenarios:
1. **Switching Power Supply (SMPS)**: The FCH47N60-VB MOSFET can effectively handle high voltage and high current in the switching power supply module, improving the efficiency and stability of the overall system. Its low on-resistance enables it to effectively reduce energy loss under high load.
2. **Motor Drive**: In industrial motor drive systems, the FCH47N60-VB can provide reliable high-voltage switching performance, suitable for high-power motor control and drive applications, ensuring high efficiency and long life of the system.
3. **Power Inverter**: This MOSFET performs well in solar inverters and other power converters, and can operate stably in high voltage and high power environments, improving the overall efficiency of the system.
4. **High-power lighting control**: In high-power LED drivers and other lighting systems, the FCH47N60-VB can effectively manage high current and high voltage, optimize lighting effects and improve energy efficiency.
These application areas demonstrate the excellent performance of the FCH47N60-VB in high-voltage and high-power environments, making it an ideal choice for a variety of high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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