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FCH47N60N-VB Product details
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Product Introduction
**FCH47N60N-VB** is a high voltage, high current N-Channel MOSFET in TO247 package. It has a drain-source voltage (VDS) of 650V and is suitable for applications that require high voltage tolerance and high current handling. It uses SJ_Multi-EPI technology, which provides low on-resistance (RDS(ON)) and excellent current carrying capacity. The maximum gate-source voltage (VGS) of this MOSFET is ±30V and the maximum drain-source current (ID) is 47A, which is suitable for high-power and high-voltage electronic devices.
**FCH47N60N-VB** is a high voltage, high current N-Channel MOSFET in TO247 package. It has a drain-source voltage (VDS) of 650V and is suitable for applications that require high voltage tolerance and high current handling. It uses SJ_Multi-EPI technology, which provides low on-resistance (RDS(ON)) and excellent current carrying capacity. The maximum gate-source voltage (VGS) of this MOSFET is ±30V and the maximum drain-source current (ID) is 47A, which is suitable for high-power and high-voltage electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: FCH47N60N-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ (VGS = 10V)
- **Drain-source current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: FCH47N60N-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ (VGS = 10V)
- **Drain-source current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Switching power supply**: In high voltage switching power supplies, the FCH47N60N-VB is able to handle high voltage and high current as a switching element. This makes it suitable for high power power conversion applications, providing efficient power conversion and ensuring system stability.
2. **Motor drive**: In high power motor drive systems, especially those requiring high voltage and high current, the high current carrying capacity and low on-resistance of the FCH47N60N-VB make it ideal for use as a switching element to improve the performance and efficiency of the drive system.
3. **Inverter**: In solar inverters and other high voltage inverter applications, this MOSFET can be used as the main switch for efficient power conversion, supporting high voltage operation and improving the performance and reliability of the overall system.
4. **Power Management System**: In high-voltage battery management systems (BMS), FCH47N60N-VB can be used for high-voltage switches and protection circuits, providing efficient current control and overvoltage protection to ensure safe and stable operation of the system.
5. **Home Appliances and Industrial Equipment**: In home appliances or industrial equipment that require high voltage and high current, such as electric heating equipment or high-power lighting systems, FCH47N60N-VB can be used as a switching device to provide stable current control and efficient energy transfer.
The high voltage tolerance and excellent current handling capability of this MOSFET enable it to perform well in high-power, high-voltage applications, meeting a variety of high current and high voltage requirements.
1. **Switching power supply**: In high voltage switching power supplies, the FCH47N60N-VB is able to handle high voltage and high current as a switching element. This makes it suitable for high power power conversion applications, providing efficient power conversion and ensuring system stability.
2. **Motor drive**: In high power motor drive systems, especially those requiring high voltage and high current, the high current carrying capacity and low on-resistance of the FCH47N60N-VB make it ideal for use as a switching element to improve the performance and efficiency of the drive system.
3. **Inverter**: In solar inverters and other high voltage inverter applications, this MOSFET can be used as the main switch for efficient power conversion, supporting high voltage operation and improving the performance and reliability of the overall system.
4. **Power Management System**: In high-voltage battery management systems (BMS), FCH47N60N-VB can be used for high-voltage switches and protection circuits, providing efficient current control and overvoltage protection to ensure safe and stable operation of the system.
5. **Home Appliances and Industrial Equipment**: In home appliances or industrial equipment that require high voltage and high current, such as electric heating equipment or high-power lighting systems, FCH47N60N-VB can be used as a switching device to provide stable current control and efficient energy transfer.
The high voltage tolerance and excellent current handling capability of this MOSFET enable it to perform well in high-power, high-voltage applications, meeting a variety of high current and high voltage requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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