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FCH47N60F-VB Product details
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Product Introduction
FCH47N60F-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high-efficiency, high-power conversion applications. With a drain-source breakdown voltage (VDS) of 650V and a continuous drain current (ID) of 47A, this MOSFET can operate stably under high voltage and high current conditions. It uses advanced SJ_Multi-EPI (super junction multi-epitaxial) technology to provide low on-resistance (RDS(ON)) and high current carrying capacity, which is particularly suitable for applications requiring high efficiency and low loss.
FCH47N60F-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high-efficiency, high-power conversion applications. With a drain-source breakdown voltage (VDS) of 650V and a continuous drain current (ID) of 47A, this MOSFET can operate stably under high voltage and high current conditions. It uses advanced SJ_Multi-EPI (super junction multi-epitaxial) technology to provide low on-resistance (RDS(ON)) and high current carrying capacity, which is particularly suitable for applications requiring high efficiency and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
FCH47N60F-VB MOSFET is suitable for a variety of high-voltage and high-power applications. Here are some typical application fields and modules:
1. **Power management module**: Due to its high voltage resistance and low on-resistance, FCH47N60F-VB is particularly suitable for use in high-efficiency DC-DC converters and AC-DC power conversion modules, which can significantly improve energy efficiency and reduce power consumption.
2. **Motor drive**: In motor drives in fields such as industrial automation and electric vehicles, this MOSFET can withstand higher currents and voltages to ensure stable operation of the equipment under high loads.
3. **Solar inverter**: Its high voltage characteristics make it widely used in solar photovoltaic inverters, which can effectively convert the DC power generated by solar panels into AC power and improve the overall efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: FCH47N60F-VB is also commonly used in UPS systems to help improve power conversion efficiency and ensure stable power support for key equipment during power outages.
Through the above applications, FCH47N60F-VB MOSFET can provide excellent performance support for various demanding power electronic systems.
FCH47N60F-VB MOSFET is suitable for a variety of high-voltage and high-power applications. Here are some typical application fields and modules:
1. **Power management module**: Due to its high voltage resistance and low on-resistance, FCH47N60F-VB is particularly suitable for use in high-efficiency DC-DC converters and AC-DC power conversion modules, which can significantly improve energy efficiency and reduce power consumption.
2. **Motor drive**: In motor drives in fields such as industrial automation and electric vehicles, this MOSFET can withstand higher currents and voltages to ensure stable operation of the equipment under high loads.
3. **Solar inverter**: Its high voltage characteristics make it widely used in solar photovoltaic inverters, which can effectively convert the DC power generated by solar panels into AC power and improve the overall efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**: FCH47N60F-VB is also commonly used in UPS systems to help improve power conversion efficiency and ensure stable power support for key equipment during power outages.
Through the above applications, FCH47N60F-VB MOSFET can provide excellent performance support for various demanding power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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