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FCH47N60_F133-VB Product details
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1. FCH47N60_F133-VB Product Introduction
FCH47N60_F133-VB is a high-performance N-channel power MOSFET in TO247 package. Its design adopts advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology, providing excellent on-resistance and power density performance. This model of device has a withstand voltage of 650V, a maximum continuous drain current of 47A, and a low on-resistance of 75mΩ (at VGS=10V). These features make it excellent in high-efficiency switching applications and suitable for high-voltage and high-current power management fields.
FCH47N60_F133-VB is a high-performance N-channel power MOSFET in TO247 package. Its design adopts advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology, providing excellent on-resistance and power density performance. This model of device has a withstand voltage of 650V, a maximum continuous drain current of 47A, and a low on-resistance of 75mΩ (at VGS=10V). These features make it excellent in high-efficiency switching applications and suitable for high-voltage and high-current power management fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. FCH47N60_F133-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology type**: Super junction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
3. Application fields and module examples of FCH47N60_F133-VB
FCH47N60_F133-VB is very suitable for the following fields and modules due to its high withstand voltage, high current and low on-resistance:
1. **Switching Power Supply (SMPS)**: In high-power switching power supplies, FCH47N60_F133-VB can be used as the main switch tube to provide high-efficiency energy conversion, especially in server power supplies and communication power supplies.
2. **Photovoltaic Inverter**: Due to its high withstand voltage and high current capability, FCH47N60_F133-VB is used as an efficient switching device in photovoltaic inverters to effectively improve energy conversion efficiency and reduce system losses.
3. **Electric Vehicle Charger**: In electric vehicle chargers, this MOSFET can handle high-power energy transfer to ensure stability and efficiency during charging.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, FCH47N60_F133-VB can be used for efficient energy conversion and provide reliable backup power management.
In short, FCH47N60_F133-VB is suitable for high-voltage and high-current applications that require efficient switching. Its high performance parameters make it an ideal choice for high-efficiency solutions in the above fields.
FCH47N60_F133-VB is very suitable for the following fields and modules due to its high withstand voltage, high current and low on-resistance:
1. **Switching Power Supply (SMPS)**: In high-power switching power supplies, FCH47N60_F133-VB can be used as the main switch tube to provide high-efficiency energy conversion, especially in server power supplies and communication power supplies.
2. **Photovoltaic Inverter**: Due to its high withstand voltage and high current capability, FCH47N60_F133-VB is used as an efficient switching device in photovoltaic inverters to effectively improve energy conversion efficiency and reduce system losses.
3. **Electric Vehicle Charger**: In electric vehicle chargers, this MOSFET can handle high-power energy transfer to ensure stability and efficiency during charging.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, FCH47N60_F133-VB can be used for efficient energy conversion and provide reliable backup power management.
In short, FCH47N60_F133-VB is suitable for high-voltage and high-current applications that require efficient switching. Its high performance parameters make it an ideal choice for high-efficiency solutions in the above fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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