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FCH35N60-VB Product details
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FCH35N60-VB MOSFET Product Introduction
FCH35N60-VB is a high-performance N-channel power MOSFET in TO247 package with 650V withstand voltage and 47A maximum continuous drain current. This MOSFET uses SJ_Multi-EPI technology, has extremely low on-resistance (RDS(ON)) and excellent switching performance, and is very suitable for high-efficiency and high-reliability applications.
FCH35N60-VB is a high-performance N-channel power MOSFET in TO247 package with 650V withstand voltage and 47A maximum continuous drain current. This MOSFET uses SJ_Multi-EPI technology, has extremely low on-resistance (RDS(ON)) and excellent switching performance, and is very suitable for high-efficiency and high-reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epi Technology)
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 220W
- **Switching speed**: Fast switching time
- **Typical application frequency**: High frequency switching power supply
- **Breakdown voltage**: 650V
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epi Technology)
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 220W
- **Switching speed**: Fast switching time
- **Typical application frequency**: High frequency switching power supply
- **Breakdown voltage**: 650V
Domain and module applications：
Applications and module examples
1. **Industrial power modules**
The high voltage and low on-resistance characteristics of the FCH35N60-VB make it ideal for use in industrial power modules, especially in high-voltage conversion and rectifier circuits. Its fast switching performance helps improve the overall efficiency of the system and reduce power consumption.
2. **Solar inverters**
Capable of handling high voltages and high currents, this MOSFET is ideal for use in solar inverters, ensuring efficient energy conversion and system reliability. Especially in scenarios requiring high switching speeds, the FCH35N60-VB can significantly reduce energy losses.
3. **Uninterruptible power supply (UPS)**
Due to its high breakdown voltage and excellent current handling capability, this MOSFET is ideal for use in uninterruptible power supply systems (UPS), providing stable power management and reliable protection under transient conditions.
4. **Electric Vehicle (EV) Charging Station**
The high voltage capability and low loss characteristics of FCH35N60-VB make it an ideal choice for key switch components in electric vehicle charging stations, ensuring fast charging and efficient energy conversion.
5. **Home Appliances and Air Conditioning Systems**
In home appliances and air conditioning systems, this MOSFET helps improve power efficiency, reduce heat generation, extend equipment life, and reduce energy consumption.
In these fields, FCH35N60-VB MOSFET can help realize high-efficiency and high-reliability power electronic solutions, especially in applications that require high voltage and high current handling.
1. **Industrial power modules**
The high voltage and low on-resistance characteristics of the FCH35N60-VB make it ideal for use in industrial power modules, especially in high-voltage conversion and rectifier circuits. Its fast switching performance helps improve the overall efficiency of the system and reduce power consumption.
2. **Solar inverters**
Capable of handling high voltages and high currents, this MOSFET is ideal for use in solar inverters, ensuring efficient energy conversion and system reliability. Especially in scenarios requiring high switching speeds, the FCH35N60-VB can significantly reduce energy losses.
3. **Uninterruptible power supply (UPS)**
Due to its high breakdown voltage and excellent current handling capability, this MOSFET is ideal for use in uninterruptible power supply systems (UPS), providing stable power management and reliable protection under transient conditions.
4. **Electric Vehicle (EV) Charging Station**
The high voltage capability and low loss characteristics of FCH35N60-VB make it an ideal choice for key switch components in electric vehicle charging stations, ensuring fast charging and efficient energy conversion.
5. **Home Appliances and Air Conditioning Systems**
In home appliances and air conditioning systems, this MOSFET helps improve power efficiency, reduce heat generation, extend equipment life, and reduce energy consumption.
In these fields, FCH35N60-VB MOSFET can help realize high-efficiency and high-reliability power electronic solutions, especially in applications that require high voltage and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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