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FCH22N60N-VB Product details
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FCH22N60N-VB Product Introduction
The FCH22N60N-VB is a high-performance single N-channel MOSFET in a TO247 package with high voltage and current handling capabilities for a variety of high-voltage applications. The device has a maximum drain-source voltage (VDS) of 650V, a maximum gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Thanks to the use of SJ_Multi-EPI technology, this MOSFET has excellent on-resistance (RDS(ON)) and fast switching characteristics, making it an ideal choice for high-efficiency power conversion and power management applications.
The FCH22N60N-VB is a high-performance single N-channel MOSFET in a TO247 package with high voltage and current handling capabilities for a variety of high-voltage applications. The device has a maximum drain-source voltage (VDS) of 650V, a maximum gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Thanks to the use of SJ_Multi-EPI technology, this MOSFET has excellent on-resistance (RDS(ON)) and fast switching characteristics, making it an ideal choice for high-efficiency power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
FCH22N60N-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C ~ 150°C
- **Number of package pins**: 3 pins
- **Package dimensions**: Standard TO247 Package size
- **Switching speed**: Low on-resistance and fast switching characteristics help improve efficiency
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C ~ 150°C
- **Number of package pins**: 3 pins
- **Package dimensions**: Standard TO247 Package size
- **Switching speed**: Low on-resistance and fast switching characteristics help improve efficiency
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS) Module**: Due to its high voltage and high current handling capabilities, the FCH22N60N-VB is ideally suited for use in switching power supplies, especially in power modules that require efficient energy conversion and high-frequency switching.
2. **Inverter Module**: In inverter designs, especially solar photovoltaic inverters and industrial inverters, the high withstand voltage and low on-resistance characteristics of this MOSFET enable it to effectively manage power conversion, thereby improving the overall efficiency of the system.
3. **Electric Vehicle Charging Pile**: This device is suitable for fast charging pile modules for electric vehicles. Due to its high current handling capability and fast switching performance, it can meet the requirements for high efficiency and stability in the charging system.
4. **Lighting Drive Circuit**: In LED lighting drive circuits that require high efficiency and long life, the low conduction loss of this MOSFET helps improve system efficiency and reduce heat generation, thereby extending the service life of the drive circuit.
5. **Industrial Control Systems**: FCH22N60N-VB is also suitable for power conversion and management modules in industrial control systems, such as motor drives, inverters, etc., because of its high voltage and current handling capabilities, enabling these systems to operate stably and reliably.
1. **Switching Power Supply (SMPS) Module**: Due to its high voltage and high current handling capabilities, the FCH22N60N-VB is ideally suited for use in switching power supplies, especially in power modules that require efficient energy conversion and high-frequency switching.
2. **Inverter Module**: In inverter designs, especially solar photovoltaic inverters and industrial inverters, the high withstand voltage and low on-resistance characteristics of this MOSFET enable it to effectively manage power conversion, thereby improving the overall efficiency of the system.
3. **Electric Vehicle Charging Pile**: This device is suitable for fast charging pile modules for electric vehicles. Due to its high current handling capability and fast switching performance, it can meet the requirements for high efficiency and stability in the charging system.
4. **Lighting Drive Circuit**: In LED lighting drive circuits that require high efficiency and long life, the low conduction loss of this MOSFET helps improve system efficiency and reduce heat generation, thereby extending the service life of the drive circuit.
5. **Industrial Control Systems**: FCH22N60N-VB is also suitable for power conversion and management modules in industrial control systems, such as motor drives, inverters, etc., because of its high voltage and current handling capabilities, enabling these systems to operate stably and reliably.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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