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FCH20N60-VB Product details
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FCH20N60-VB MOSFET Product Introduction
FCH20N60-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its main features include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS) and 3.5V threshold voltage (Vth). The device has an on-resistance (RDS(ON)) of 160mΩ at VGS=10V and a maximum drain current (ID) of 20A. FCH20N60-VB uses SJ_Multi-EPI technology, which can effectively improve the switching efficiency of the device and reduce power consumption, and is suitable for high-efficiency power conversion and power management applications.
FCH20N60-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. Its main features include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS) and 3.5V threshold voltage (Vth). The device has an on-resistance (RDS(ON)) of 160mΩ at VGS=10V and a maximum drain current (ID) of 20A. FCH20N60-VB uses SJ_Multi-EPI technology, which can effectively improve the switching efficiency of the device and reduce power consumption, and is suitable for high-efficiency power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Industrial power converters**: FCH20N60-VB is suitable for industrial-grade power converters, especially in scenarios with high voltage and high efficiency requirements. Its 650V withstand voltage capability enables it to cope with various industrial power conversion applications.
2. **Solar inverters**: This MOSFET is also widely used in solar inverters. Due to its efficient conduction characteristics and low on-resistance, FCH20N60-VB can effectively improve the conversion efficiency of the inverter, thereby reducing energy loss.
3. **Electric vehicle chargers**: In electric vehicle charging modules, FCH20N60-VB can be used as an efficient switching device to meet the charging requirements of high voltage and high current, while maintaining low conduction losses and high reliability.
4. **Motor drivers**: Due to its high withstand voltage and high current characteristics, FCH20N60-VB is suitable for use in various motor drivers, especially in applications that require high power conversion efficiency.
FCH20N60-VB MOSFET can play a key role in these areas, providing efficient and reliable power management and switch control solutions.
1. **Industrial power converters**: FCH20N60-VB is suitable for industrial-grade power converters, especially in scenarios with high voltage and high efficiency requirements. Its 650V withstand voltage capability enables it to cope with various industrial power conversion applications.
2. **Solar inverters**: This MOSFET is also widely used in solar inverters. Due to its efficient conduction characteristics and low on-resistance, FCH20N60-VB can effectively improve the conversion efficiency of the inverter, thereby reducing energy loss.
3. **Electric vehicle chargers**: In electric vehicle charging modules, FCH20N60-VB can be used as an efficient switching device to meet the charging requirements of high voltage and high current, while maintaining low conduction losses and high reliability.
4. **Motor drivers**: Due to its high withstand voltage and high current characteristics, FCH20N60-VB is suitable for use in various motor drivers, especially in applications that require high power conversion efficiency.
FCH20N60-VB MOSFET can play a key role in these areas, providing efficient and reliable power management and switch control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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