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FCD9N60NTM-VB Product details
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FCD9N60NTM-VB Product Introduction
FCD9N60NTM-VB is a single N-channel MOSFET in TO-252 package. This device has a high withstand voltage of 650V and is suitable for high voltage applications. Its design adopts Super Junction (SJ_Multi-EPI) technology, which provides excellent on-resistance performance and low conduction loss, making it excel in high efficiency and high reliability.
FCD9N60NTM-VB is a single N-channel MOSFET in TO-252 package. This device has a high withstand voltage of 650V and is suitable for high voltage applications. Its design adopts Super Junction (SJ_Multi-EPI) technology, which provides excellent on-resistance performance and low conduction loss, making it excel in high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: Super junction (SJ_Multi-EPI)
- **Package type**: TO-252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: Super junction (SJ_Multi-EPI)
Domain and module applications：
Applications and modules
FCD9N60NTM-VB MOSFET is particularly suitable for applications that require high efficiency conversion and reliability due to its high withstand voltage and low on-resistance. Common application scenarios include:
1. **Switching Power Supply (SMPS)**: This MOSFET is commonly used in high-voltage switching power supplies, especially in industrial and telecommunications applications, to help improve conversion efficiency and reduce energy loss.
2. **Motor Drive**: Suitable for industrial motor drive control systems, providing stability and durability under high-voltage operation.
3. **Lighting Control**: In LED drivers and other lighting control applications, this MOSFET can effectively manage power and improve the efficiency of the overall system.
4. **Inverter and Converter Modules**: Suitable for high-voltage converter modules in solar inverters and battery management systems, with excellent performance at high voltage and high efficiency.
These applications and modules highlight the important role of FCD9N60NTM-VB in high-voltage, high-performance environments, making it an indispensable electronic component in multiple industries.
FCD9N60NTM-VB MOSFET is particularly suitable for applications that require high efficiency conversion and reliability due to its high withstand voltage and low on-resistance. Common application scenarios include:
1. **Switching Power Supply (SMPS)**: This MOSFET is commonly used in high-voltage switching power supplies, especially in industrial and telecommunications applications, to help improve conversion efficiency and reduce energy loss.
2. **Motor Drive**: Suitable for industrial motor drive control systems, providing stability and durability under high-voltage operation.
3. **Lighting Control**: In LED drivers and other lighting control applications, this MOSFET can effectively manage power and improve the efficiency of the overall system.
4. **Inverter and Converter Modules**: Suitable for high-voltage converter modules in solar inverters and battery management systems, with excellent performance at high voltage and high efficiency.
These applications and modules highlight the important role of FCD9N60NTM-VB in high-voltage, high-performance environments, making it an indispensable electronic component in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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