中文
English
FCD900N60Z-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**FCD900N60Z-VB** is a high voltage N-Channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 650V and is suitable for applications that require high voltage tolerance. It uses SJ_Multi-EPI technology, which provides good current carrying capacity and low on-resistance (RDS(ON)). The gate-source voltage (VGS) of this MOSFET is up to ±30V and the drain-source current (ID) is 7A, which is suitable for high voltage and medium current applications.
**FCD900N60Z-VB** is a high voltage N-Channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 650V and is suitable for applications that require high voltage tolerance. It uses SJ_Multi-EPI technology, which provides good current carrying capacity and low on-resistance (RDS(ON)). The gate-source voltage (VGS) of this MOSFET is up to ±30V and the drain-source current (ID) is 7A, which is suitable for high voltage and medium current applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FCD900N60Z-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ (VGS = 10V)
- **Drain-source current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Model**: FCD900N60Z-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ (VGS = 10V)
- **Drain-source current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and modules
1. **Switching power supply**: In high voltage switching power supply modules, the high drain-source voltage (650V) and low on-resistance of the FCD900N60Z-VB make it suitable for high-efficiency power conversion. It can be used as a switching element to improve system efficiency in high-power power conversion applications.
2. **Motor drive**: In motor drive systems, especially DC motor drive applications that require high voltage, the high voltage tolerance of this MOSFET can ensure stability and reliability when driving high-power motors.
3. **Power management**: In power management systems, such as battery management systems (BMS), the FCD900N60Z-VB can be used for high-voltage switches and protection circuits to ensure the safety of the system under overvoltage and overcurrent conditions.
4. **Inverter**: In high voltage inverter applications such as solar inverters, this MOSFET can be used as the main switch to provide efficient power conversion while supporting high voltage operation, improving the overall performance and reliability of the system.
5. **Home appliances**: In home appliances that require high voltage and higher current, such as high-voltage lighting systems or electric heating equipment, the FCD900N60Z-VB can be used as a switching device to provide stable current control and efficient energy transfer.
The high voltage handling capability and moderate on-resistance of this MOSFET make it excel in applications that need to handle high voltage and current.
1. **Switching power supply**: In high voltage switching power supply modules, the high drain-source voltage (650V) and low on-resistance of the FCD900N60Z-VB make it suitable for high-efficiency power conversion. It can be used as a switching element to improve system efficiency in high-power power conversion applications.
2. **Motor drive**: In motor drive systems, especially DC motor drive applications that require high voltage, the high voltage tolerance of this MOSFET can ensure stability and reliability when driving high-power motors.
3. **Power management**: In power management systems, such as battery management systems (BMS), the FCD900N60Z-VB can be used for high-voltage switches and protection circuits to ensure the safety of the system under overvoltage and overcurrent conditions.
4. **Inverter**: In high voltage inverter applications such as solar inverters, this MOSFET can be used as the main switch to provide efficient power conversion while supporting high voltage operation, improving the overall performance and reliability of the system.
5. **Home appliances**: In home appliances that require high voltage and higher current, such as high-voltage lighting systems or electric heating equipment, the FCD900N60Z-VB can be used as a switching device to provide stable current control and efficient energy transfer.
The high voltage handling capability and moderate on-resistance of this MOSFET make it excel in applications that need to handle high voltage and current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
