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FCD7N60-VB Product details
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FCD7N60-VB MOSFET Product Introduction
FCD7N60-VB is a high voltage single N-channel MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of 650V and an on-resistance (RDS(ON)) of 700mΩ, supporting a maximum drain current (ID) of 7A. Using SJ_Multi-EPI technology, this MOSFET is designed for high voltage applications, combining high voltage tolerance and stable conductivity characteristics, and is suitable for high voltage switching and power management applications.
FCD7N60-VB is a high voltage single N-channel MOSFET in TO252 package. The MOSFET has a drain-source voltage (VDS) of 650V and an on-resistance (RDS(ON)) of 700mΩ, supporting a maximum drain current (ID) of 7A. Using SJ_Multi-EPI technology, this MOSFET is designed for high voltage applications, combining high voltage tolerance and stable conductivity characteristics, and is suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- **Package type**: TO252 (also known as DPAK), which is a surface mount package suitable for medium power, with good heat dissipation performance and small footprint.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching applications, providing excellent switching performance and current control capability.
3. **Drain-source voltage (VDS)**: 650V
- **Maximum drain-source voltage**: 650V, suitable for switching and control applications in high voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand a gate voltage of ±30V to adapt to different driving conditions.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: 3.5V, ensuring effective conduction at a lower gate voltage, providing better switching performance.
6. **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **On-resistance**: When the gate voltage is 10V, the on-resistance is 700mΩ, which helps to reduce conduction loss and improve circuit efficiency.
7. **Maximum drain current (ID)**: 7A
- **Maximum continuous current**: Able to withstand a maximum drain current of 7A, suitable for medium power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: Uses SJ_Multi-EPI technology, which optimizes the high voltage handling capability and on-resistance of MOSFET, providing stable electrical performance and reliability.
1. **Package**: TO252
- **Package type**: TO252 (also known as DPAK), which is a surface mount package suitable for medium power, with good heat dissipation performance and small footprint.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching applications, providing excellent switching performance and current control capability.
3. **Drain-source voltage (VDS)**: 650V
- **Maximum drain-source voltage**: 650V, suitable for switching and control applications in high voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand a gate voltage of ±30V to adapt to different driving conditions.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: 3.5V, ensuring effective conduction at a lower gate voltage, providing better switching performance.
6. **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **On-resistance**: When the gate voltage is 10V, the on-resistance is 700mΩ, which helps to reduce conduction loss and improve circuit efficiency.
7. **Maximum drain current (ID)**: 7A
- **Maximum continuous current**: Able to withstand a maximum drain current of 7A, suitable for medium power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: Uses SJ_Multi-EPI technology, which optimizes the high voltage handling capability and on-resistance of MOSFET, providing stable electrical performance and reliability.
Domain and module applications：
Application fields and module examples
The high voltage tolerance and moderate current carrying capacity of FCD7N60-VB make it suitable for a variety of fields and modules, mainly including:
1. **High voltage switch**
FCD7N60-VB can be used in high voltage switch applications, such as switching elements in high voltage DC-DC converters, supporting 650V voltage processing, providing reliable switch control for high voltage circuits.
2. **Power management system**
In power management systems, FCD7N60-VB is suitable for high voltage power management and current regulation, ensuring stable operation of the system under high voltage conditions and providing efficient current control.
3. **Power inverter**
In power inverter applications, such as inverters in photovoltaic power generation systems, FCD7N60-VB can handle high voltages, ensure high efficiency and stability of the inverter, and is suitable for power conversion and regulation.
4. **Industrial Motor Drive**
FCD7N60-VB is also suitable for high voltage switching in industrial motor drive systems, which can effectively control the drive current of the motor and meet the needs of high power motors.
5. **Power Conversion Module**
In power conversion modules, FCD7N60-VB is used in high voltage conversion and switching applications, such as high voltage lighting systems and power conditioning modules, providing efficient current control and conversion capabilities.
6. **High Voltage Battery Management System**
FCD7N60-VB is suitable for high voltage battery management systems, especially in electric vehicles and energy storage systems, providing stable switching control and high voltage management functions to ensure system efficiency and reliability.
The high voltage tolerance and low on-resistance of FCD7N60-VB make it an ideal choice for high voltage applications, suitable for various power and power management design requirements.
The high voltage tolerance and moderate current carrying capacity of FCD7N60-VB make it suitable for a variety of fields and modules, mainly including:
1. **High voltage switch**
FCD7N60-VB can be used in high voltage switch applications, such as switching elements in high voltage DC-DC converters, supporting 650V voltage processing, providing reliable switch control for high voltage circuits.
2. **Power management system**
In power management systems, FCD7N60-VB is suitable for high voltage power management and current regulation, ensuring stable operation of the system under high voltage conditions and providing efficient current control.
3. **Power inverter**
In power inverter applications, such as inverters in photovoltaic power generation systems, FCD7N60-VB can handle high voltages, ensure high efficiency and stability of the inverter, and is suitable for power conversion and regulation.
4. **Industrial Motor Drive**
FCD7N60-VB is also suitable for high voltage switching in industrial motor drive systems, which can effectively control the drive current of the motor and meet the needs of high power motors.
5. **Power Conversion Module**
In power conversion modules, FCD7N60-VB is used in high voltage conversion and switching applications, such as high voltage lighting systems and power conditioning modules, providing efficient current control and conversion capabilities.
6. **High Voltage Battery Management System**
FCD7N60-VB is suitable for high voltage battery management systems, especially in electric vehicles and energy storage systems, providing stable switching control and high voltage management functions to ensure system efficiency and reliability.
The high voltage tolerance and low on-resistance of FCD7N60-VB make it an ideal choice for high voltage applications, suitable for various power and power management design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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