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FCD7N60TM-VB Product details
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FCD7N60TM-VB MOSFET Product Introduction
FCD7N60TM-VB is a high voltage N-Channel MOSFET in TO252 package. This MOSFET is designed for high voltage applications with a maximum drain-to-source voltage (VDS) of 650V and a gate-to-source voltage (VGS) of ±30V. SJ_Multi-EPI technology is used, and this multi-junction silicon technology improves the voltage tolerance of the device and optimizes the on-resistance. The on-resistance (RDS(ON)) of FCD7N60TM-VB is 700mΩ, and it can withstand a maximum continuous drain current (ID) of 7A at VGS=10V. This makes it ideal for high voltage power management and switching applications.
FCD7N60TM-VB is a high voltage N-Channel MOSFET in TO252 package. This MOSFET is designed for high voltage applications with a maximum drain-to-source voltage (VDS) of 650V and a gate-to-source voltage (VGS) of ±30V. SJ_Multi-EPI technology is used, and this multi-junction silicon technology improves the voltage tolerance of the device and optimizes the on-resistance. The on-resistance (RDS(ON)) of FCD7N60TM-VB is 700mΩ, and it can withstand a maximum continuous drain current (ID) of 7A at VGS=10V. This makes it ideal for high voltage power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- **Package type**: TO252, suitable for medium power and space-constrained applications, providing good heat dissipation and mechanical protection.
2. **Configuration**: Single-channel N-Channel
- **Configuration**: Single-channel N-Channel MOSFET, suitable for high voltage switching and control applications.
3. **VDS (Drain to Source Voltage)**: 650V
- **Maximum Voltage**: 650V, supporting switching and control applications in high voltage environments.
4. **VGS (Gate to Source Voltage)**: ±30V
- **Maximum Gate Voltage**: ±30V, supporting a wide gate drive range.
5. **Vth（Threshold Voltage）**: 3.5V
- **Threshold Voltage**: 3.5V, the voltage point where the MOSFET starts to conduct.
6. **RDS(ON)（On-resistance）**:
- **When VGS=10V**: 700mΩ
- **On-resistance**: 700mΩ at VGS=10V, suitable for medium current load applications.
7. **ID（Continuous Drain Current）**: 7A
- **Maximum Current**: 7A, supports medium current load.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: SJ_Multi-EPI technology, which improves voltage tolerance and optimizes on-resistance.
1. **Package**: TO252
- **Package type**: TO252, suitable for medium power and space-constrained applications, providing good heat dissipation and mechanical protection.
2. **Configuration**: Single-channel N-Channel
- **Configuration**: Single-channel N-Channel MOSFET, suitable for high voltage switching and control applications.
3. **VDS (Drain to Source Voltage)**: 650V
- **Maximum Voltage**: 650V, supporting switching and control applications in high voltage environments.
4. **VGS (Gate to Source Voltage)**: ±30V
- **Maximum Gate Voltage**: ±30V, supporting a wide gate drive range.
5. **Vth（Threshold Voltage）**: 3.5V
- **Threshold Voltage**: 3.5V, the voltage point where the MOSFET starts to conduct.
6. **RDS(ON)（On-resistance）**:
- **When VGS=10V**: 700mΩ
- **On-resistance**: 700mΩ at VGS=10V, suitable for medium current load applications.
7. **ID（Continuous Drain Current）**: 7A
- **Maximum Current**: 7A, supports medium current load.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: SJ_Multi-EPI technology, which improves voltage tolerance and optimizes on-resistance.
Domain and module applications：
Application Examples
The high voltage handling capability and moderate on-resistance of the FCD7N60TM-VB MOSFET make it excel in multiple high voltage application scenarios. Here are a few typical application examples:
1. **High Voltage Power Switch**:
- **Application**: The 650V maximum drain voltage of the FCD7N60TM-VB makes it suitable for high voltage power switching circuits, such as switching elements in power adapters and converters to stably control current and improve power efficiency.
2. **Power Converter**:
- **Application**: In power converters, the FCD7N60TM-VB can be used as a switching element for high voltage AC to DC conversion. Its high voltage capability and on-resistance are suitable for handling the conversion requirements of high voltage inputs and outputs.
3. **Inverter**:
- **Application**: The FCD7N60TM-VB is used for voltage conversion and switch control in inverters. Its high voltage tolerance and good on-resistance make it suitable for high voltage inverter applications such as solar inverters and power converters.
4. **High Voltage Protection Circuit**:
- **Application**: In high voltage protection circuits, FCD7N60TM-VB can be used as an overvoltage protection switch to prevent high voltage from damaging the circuit. Its high voltage resistance ensures the stability and safety of the circuit.
5. **Electric Vehicle Power Management**:
- **Application**: In the power management system of electric vehicles, FCD7N60TM-VB can be used for battery management and power conversion. Its high voltage tolerance and on-resistance enable it to provide reliable switching and control functions in electric vehicle power systems.
The high voltage handling capability and stability of FCD7N60TM-VB MOSFET make it play an important role in applications such as power management, power conversion, inverters and high voltage protection.
The high voltage handling capability and moderate on-resistance of the FCD7N60TM-VB MOSFET make it excel in multiple high voltage application scenarios. Here are a few typical application examples:
1. **High Voltage Power Switch**:
- **Application**: The 650V maximum drain voltage of the FCD7N60TM-VB makes it suitable for high voltage power switching circuits, such as switching elements in power adapters and converters to stably control current and improve power efficiency.
2. **Power Converter**:
- **Application**: In power converters, the FCD7N60TM-VB can be used as a switching element for high voltage AC to DC conversion. Its high voltage capability and on-resistance are suitable for handling the conversion requirements of high voltage inputs and outputs.
3. **Inverter**:
- **Application**: The FCD7N60TM-VB is used for voltage conversion and switch control in inverters. Its high voltage tolerance and good on-resistance make it suitable for high voltage inverter applications such as solar inverters and power converters.
4. **High Voltage Protection Circuit**:
- **Application**: In high voltage protection circuits, FCD7N60TM-VB can be used as an overvoltage protection switch to prevent high voltage from damaging the circuit. Its high voltage resistance ensures the stability and safety of the circuit.
5. **Electric Vehicle Power Management**:
- **Application**: In the power management system of electric vehicles, FCD7N60TM-VB can be used for battery management and power conversion. Its high voltage tolerance and on-resistance enable it to provide reliable switching and control functions in electric vehicle power systems.
The high voltage handling capability and stability of FCD7N60TM-VB MOSFET make it play an important role in applications such as power management, power conversion, inverters and high voltage protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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