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FCD7N60TF-VB Product details
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Product Introduction
FCD7N60TF-VB is a high voltage N-channel MOSFET in TO252 package, designed to withstand high voltage and provide efficient switching performance. It has a drain-source voltage (VDS) of 650V and a drain current (ID) of 7A, and an on-resistance of 700mΩ at a gate-source voltage (VGS) of 10V. Using SJ_Multi-EPI technology, this MOSFET performs well in high voltage applications, can effectively handle high voltage loads, and is suitable for various power conversion and control systems.
FCD7N60TF-VB is a high voltage N-channel MOSFET in TO252 package, designed to withstand high voltage and provide efficient switching performance. It has a drain-source voltage (VDS) of 650V and a drain current (ID) of 7A, and an on-resistance of 700mΩ at a gate-source voltage (VGS) of 10V. Using SJ_Multi-EPI technology, this MOSFET performs well in high voltage applications, can effectively handle high voltage loads, and is suitable for various power conversion and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High voltage power converter**:
FCD7N60TF-VB is suitable for high voltage power converters, such as high voltage DC-DC converters (DC-DC converters). Its 650V drain-source voltage allows it to work stably in high voltage environments, while its 700mΩ on-resistance can effectively control power loss and ensure high efficiency of the converter.
2. **Power regulation module**:
In power regulation modules, FCD7N60TF-VB is able to handle high voltage signals and provide stable switching performance. Its high voltage tolerance enables it to perform precise regulation and control in high voltage power systems, improving the stability and reliability of power regulation.
3. **Industrial power management system**:
FCD7N60TF-VB is suitable for high voltage applications in industrial power management systems. In these systems, this MOSFET is able to handle high voltage loads and optimize power management and improve overall system efficiency through its stable switching performance and lower power loss.
4. **Inverter Application**:
In inverter systems, FCD7N60TF-VB can be used to handle high voltage input and provide efficient power conversion. Its high voltage tolerance and good switching performance make it an ideal switching element in inverters, especially in power conversion tasks that require high reliability and high efficiency.
FCD7N60TF-VB's high voltage tolerance and excellent switching performance enable it to perform well in various high voltage applications, providing reliable support for power electronic equipment and power systems.
1. **High voltage power converter**:
FCD7N60TF-VB is suitable for high voltage power converters, such as high voltage DC-DC converters (DC-DC converters). Its 650V drain-source voltage allows it to work stably in high voltage environments, while its 700mΩ on-resistance can effectively control power loss and ensure high efficiency of the converter.
2. **Power regulation module**:
In power regulation modules, FCD7N60TF-VB is able to handle high voltage signals and provide stable switching performance. Its high voltage tolerance enables it to perform precise regulation and control in high voltage power systems, improving the stability and reliability of power regulation.
3. **Industrial power management system**:
FCD7N60TF-VB is suitable for high voltage applications in industrial power management systems. In these systems, this MOSFET is able to handle high voltage loads and optimize power management and improve overall system efficiency through its stable switching performance and lower power loss.
4. **Inverter Application**:
In inverter systems, FCD7N60TF-VB can be used to handle high voltage input and provide efficient power conversion. Its high voltage tolerance and good switching performance make it an ideal switching element in inverters, especially in power conversion tasks that require high reliability and high efficiency.
FCD7N60TF-VB's high voltage tolerance and excellent switching performance enable it to perform well in various high voltage applications, providing reliable support for power electronic equipment and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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