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FCD5N60-VB Product details
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Product Introduction - FCD5N60-VB MOSFET
The FCD5N60-VB is a high voltage N-channel MOSFET in TO252 package. With a maximum drain-source voltage of 650V, this MOSFET is designed for high voltage applications. Using SJ_Multi-EPI technology, this MOSFET provides reliable performance and stability under high voltage operation, suitable for power management and high voltage switching applications. The FCD5N60-VB has an on-resistance of 700mΩ, making it an excellent performer in applications requiring higher current carrying capacity.
The FCD5N60-VB is a high voltage N-channel MOSFET in TO252 package. With a maximum drain-source voltage of 650V, this MOSFET is designed for high voltage applications. Using SJ_Multi-EPI technology, this MOSFET provides reliable performance and stability under high voltage operation, suitable for power management and high voltage switching applications. The FCD5N60-VB has an on-resistance of 700mΩ, making it an excellent performer in applications requiring higher current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High voltage power switch**:
The 650V drain-source voltage and 700mΩ on-resistance of the FCD5N60-VB make it an ideal choice for high voltage power switch modules. It can be used in power switch circuits to perform efficient and stable switching operations in high voltage environments to ensure system reliability and efficiency.
2. **Power converter**:
In high voltage power converters, the FCD5N60-VB is able to handle high voltage inputs while providing effective current control. Due to its high voltage withstand capability and relatively low on-resistance, this MOSFET is suitable for high power power conversion applications such as DC to DC converters (DC-DC) and other power conversion modules.
3. **High voltage motor drive**:
The FCD5N60-VB can be used in high voltage motor drive circuits, especially in applications that require high voltage and medium current handling. Its high voltage tolerance enables it to reliably control the start and operation of high-voltage motors in motor drive circuits, and is suitable for use in industrial motor control and high-voltage motor applications.
4. **Power protection circuit**:
In the power protection circuit, FCD5N60-VB can be used as a high-voltage protection switch to prevent overvoltage or overcurrent from damaging the circuit. Its high voltage capability and stable performance make it suitable for power protection modules and high-voltage protection applications to ensure the safe and stable operation of the system.
The high voltage capability and reliable performance of FCD5N60-VB make it widely used in applications such as high-voltage power switches, power converters, high-voltage motor drives, and power protection, and can meet the needs of various high-voltage scenarios.
1. **High voltage power switch**:
The 650V drain-source voltage and 700mΩ on-resistance of the FCD5N60-VB make it an ideal choice for high voltage power switch modules. It can be used in power switch circuits to perform efficient and stable switching operations in high voltage environments to ensure system reliability and efficiency.
2. **Power converter**:
In high voltage power converters, the FCD5N60-VB is able to handle high voltage inputs while providing effective current control. Due to its high voltage withstand capability and relatively low on-resistance, this MOSFET is suitable for high power power conversion applications such as DC to DC converters (DC-DC) and other power conversion modules.
3. **High voltage motor drive**:
The FCD5N60-VB can be used in high voltage motor drive circuits, especially in applications that require high voltage and medium current handling. Its high voltage tolerance enables it to reliably control the start and operation of high-voltage motors in motor drive circuits, and is suitable for use in industrial motor control and high-voltage motor applications.
4. **Power protection circuit**:
In the power protection circuit, FCD5N60-VB can be used as a high-voltage protection switch to prevent overvoltage or overcurrent from damaging the circuit. Its high voltage capability and stable performance make it suitable for power protection modules and high-voltage protection applications to ensure the safe and stable operation of the system.
The high voltage capability and reliable performance of FCD5N60-VB make it widely used in applications such as high-voltage power switches, power converters, high-voltage motor drives, and power protection, and can meet the needs of various high-voltage scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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