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FCD5N60TM-VB Product details
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FCD5N60TM-VB MOSFET Product Introduction
FCD5N60TM-VB is a high-voltage N-channel MOSFET packaged in TO252, specially designed for high-voltage, high-power electronic applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, suitable for circuits that require high voltage handling. The gate-source voltage (VGS) range is ±30V, enabling it to operate stably under various control conditions. The gate threshold voltage (Vth) is 3.5V, ensuring reliable turn-on and turn-off at the appropriate gate voltage. The on-resistance (RDS(ON)) is 700mΩ @ VGS=10V, suitable for applications with certain requirements on power consumption and heat. FCD5N60TM-VB uses SJ_Multi-EPI technology to improve its reliability and efficiency in high-power applications.
FCD5N60TM-VB is a high-voltage N-channel MOSFET packaged in TO252, specially designed for high-voltage, high-power electronic applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, suitable for circuits that require high voltage handling. The gate-source voltage (VGS) range is ±30V, enabling it to operate stably under various control conditions. The gate threshold voltage (Vth) is 3.5V, ensuring reliable turn-on and turn-off at the appropriate gate voltage. The on-resistance (RDS(ON)) is 700mΩ @ VGS=10V, suitable for applications with certain requirements on power consumption and heat. FCD5N60TM-VB uses SJ_Multi-EPI technology to improve its reliability and efficiency in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FCD5N60TM-VB MOSFET Detailed parameter description
- **Package type (Package): ** TO252
- **Configuration (Configuration): ** Single N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 700mΩ @ VGS=10V
- **Drain current (ID): ** 7A
- **Technology type (Technology): ** SJ_Multi-EPI
- **Package type (Package): ** TO252
- **Configuration (Configuration): ** Single N-Channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Gate threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 700mΩ @ VGS=10V
- **Drain current (ID): ** 7A
- **Technology type (Technology): ** SJ_Multi-EPI
Domain and module applications：
FCD5N60TM-VB MOSFET Applicable fields and application modules
FCD5N60TM-VB MOSFET is suitable for the following fields and modules due to its high voltage withstand capability and suitable on-resistance:
1. **High-voltage switching power supply (SMPS):** In high-voltage switching power supply systems, FCD5N60TM-VB can effectively handle high voltages of 650V, and its higher on-resistance is suitable for low-power consumption scenarios in power switches or voltage converters.
2. **Power converters:** Used in DC-DC and AC-DC converters, FCD5N60TM-VB can stably handle high voltage currents, ensuring stability and efficiency during power conversion.
3. **Motor drive circuits:** In high-voltage motor drive circuits, this MOSFET can be used to control the start-up and operation of the motor. Its high voltage withstand capability and suitable on-resistance enable it to effectively handle large currents when driving motors.
4. **Inverter:** In inverter applications, such as photovoltaic or wind power inverters, FCD5N60TM-VB can withstand high voltages and is suitable for use in the switch and regulation modules of the inverter to ensure efficient power conversion.
5. **Industrial Power Management:** This MOSFET is suitable for industrial power management systems, such as switch control and current regulation of high-voltage power supplies, and can operate reliably under high voltage conditions.
6. **High-power Electronic Equipment:** In high-power electronic equipment, FCD5N60TM-VB can be used as a main switch to handle high voltage and high power, meeting the high requirements of high-power equipment for switching devices.
In summary, FCD5N60TM-VB MOSFET is suitable for a variety of high-voltage and high-power applications, including switching power supplies, power converters, inverters, etc., with its excellent high-voltage tolerance and suitable on-resistance. Its stability and reliability enable it to effectively support the operation of high-power electronic systems in these applications.
FCD5N60TM-VB MOSFET is suitable for the following fields and modules due to its high voltage withstand capability and suitable on-resistance:
1. **High-voltage switching power supply (SMPS):** In high-voltage switching power supply systems, FCD5N60TM-VB can effectively handle high voltages of 650V, and its higher on-resistance is suitable for low-power consumption scenarios in power switches or voltage converters.
2. **Power converters:** Used in DC-DC and AC-DC converters, FCD5N60TM-VB can stably handle high voltage currents, ensuring stability and efficiency during power conversion.
3. **Motor drive circuits:** In high-voltage motor drive circuits, this MOSFET can be used to control the start-up and operation of the motor. Its high voltage withstand capability and suitable on-resistance enable it to effectively handle large currents when driving motors.
4. **Inverter:** In inverter applications, such as photovoltaic or wind power inverters, FCD5N60TM-VB can withstand high voltages and is suitable for use in the switch and regulation modules of the inverter to ensure efficient power conversion.
5. **Industrial Power Management:** This MOSFET is suitable for industrial power management systems, such as switch control and current regulation of high-voltage power supplies, and can operate reliably under high voltage conditions.
6. **High-power Electronic Equipment:** In high-power electronic equipment, FCD5N60TM-VB can be used as a main switch to handle high voltage and high power, meeting the high requirements of high-power equipment for switching devices.
In summary, FCD5N60TM-VB MOSFET is suitable for a variety of high-voltage and high-power applications, including switching power supplies, power converters, inverters, etc., with its excellent high-voltage tolerance and suitable on-resistance. Its stability and reliability enable it to effectively support the operation of high-power electronic systems in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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