FCD4N60TF-VB Product details
Product introduction:
**FCD4N60TF-VB** is a high voltage, high withstand voltage N-Channel MOSFET in a TO252 package and uses SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) range of ±30V. Its on-resistance (RDS(ON)) is 1000mΩ (at VGS = 10V) and the maximum drain current (ID) is 5A. SJ_Multi-EPI technology provides MOSFETs with excellent voltage tolerance and reliability, and is suitable for applications requiring high voltage and high stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Drain Current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
**FCD4N60TF-VB**'s high voltage tolerance and high on-resistance make it suitable for the following areas and modules:
1. **High voltage power switch**: FCD4N60TF-VB performs well in high voltage power switch applications, capable of handling voltages up to 650V, and is suitable for a variety of high voltage power modules such as power converters and high voltage power switches.
2. **Power converter**: In power converters, especially those that need to withstand high voltages, the high voltage tolerance and stability of FCD4N60TF-VB make it an ideal choice. This includes applications such as solar inverters and industrial power converters.
3. **Lighting control system**: In high voltage lighting control systems, FCD4N60TF-VB can be used as a switching element to control the switching and adjustment of high voltage lamps. Its high voltage and high voltage tolerance make it suitable for large lighting systems and commercial lighting applications.
4. **Industrial Motor Drive**: In high-voltage industrial motor drive systems, FCD4N60TF-VB can reliably handle high voltages in motor startup and operation, ensuring the stability and safety of the motor system.
5. **High-power Switch Application**: This MOSFET is suitable for high-power switch applications such as power management and protection systems. Its high voltage and high withstand voltage characteristics enable it to operate stably in high-power switches.
6. **High-voltage Battery Management**: In systems that need to manage high-voltage batteries, FCD4N60TF-VB can be used as a battery protection switch to ensure safe and stable operation of the battery in a high-voltage environment.
**FCD4N60TF-VB**'s high voltage tolerance and stability enable it to excel in high-voltage power switches, power converters, lighting control systems, industrial motor drives, high-power switch applications, and high-voltage battery management.
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