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FCD380N60E-VB Product details
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FCD380N60E-VB MOSFET Product Introduction
The FCD380N60E-VB is a high voltage N-Channel MOSFET in a TO252 package. This MOSFET is designed for high voltage applications and can withstand a drain-to-source voltage (VDS) of up to 650V and a gate-to-source voltage (VGS) of up to ±30V. SJ_Multi-EPI technology is used, and this multi-junction silicon technology improves the voltage tolerance of the device and reduces the on-resistance. The on-resistance (RDS(ON)) of the FCD380N60E-VB is 370mΩ, and it can withstand a maximum continuous drain current (ID) of 11A at VGS=10V. This MOSFET is suitable for applications that require high voltage tolerance and stable switching performance.
The FCD380N60E-VB is a high voltage N-Channel MOSFET in a TO252 package. This MOSFET is designed for high voltage applications and can withstand a drain-to-source voltage (VDS) of up to 650V and a gate-to-source voltage (VGS) of up to ±30V. SJ_Multi-EPI technology is used, and this multi-junction silicon technology improves the voltage tolerance of the device and reduces the on-resistance. The on-resistance (RDS(ON)) of the FCD380N60E-VB is 370mΩ, and it can withstand a maximum continuous drain current (ID) of 11A at VGS=10V. This MOSFET is suitable for applications that require high voltage tolerance and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- **Package type**: TO252, suitable for medium power and space-constrained applications, providing good heat dissipation and mechanical protection.
2. **Configuration**: Single-channel N-Channel
- **Configuration**: Single-channel N-Channel MOSFET, suitable for high voltage switching and control applications.
3. **VDS (Drain to Source Voltage)**: 650V
- **Maximum Voltage**: 650V, suitable for switching and control applications in high voltage environments.
4. **VGS (Gate to Source Voltage)**: ±30V
- **Maximum Gate Voltage**: ±30V, supporting a wide gate drive range.
5. **Vth（Threshold Voltage）**: 3.5V
- **Threshold Voltage**: 3.5V, the voltage point where the MOSFET starts to conduct.
6. **RDS(ON)（On-resistance）**:
- **When VGS=10V**: 370mΩ
- **On-resistance**: 370mΩ at VGS=10V, suitable for medium current load applications.
7. **ID（Continuous Drain Current）**: 11A
- **Maximum Current**: 11A, supports medium current load.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: SJ_Multi-EPI technology, which enhances voltage tolerance and reduces on-resistance.
1. **Package**: TO252
- **Package type**: TO252, suitable for medium power and space-constrained applications, providing good heat dissipation and mechanical protection.
2. **Configuration**: Single-channel N-Channel
- **Configuration**: Single-channel N-Channel MOSFET, suitable for high voltage switching and control applications.
3. **VDS (Drain to Source Voltage)**: 650V
- **Maximum Voltage**: 650V, suitable for switching and control applications in high voltage environments.
4. **VGS (Gate to Source Voltage)**: ±30V
- **Maximum Gate Voltage**: ±30V, supporting a wide gate drive range.
5. **Vth（Threshold Voltage）**: 3.5V
- **Threshold Voltage**: 3.5V, the voltage point where the MOSFET starts to conduct.
6. **RDS(ON)（On-resistance）**:
- **When VGS=10V**: 370mΩ
- **On-resistance**: 370mΩ at VGS=10V, suitable for medium current load applications.
7. **ID（Continuous Drain Current）**: 11A
- **Maximum Current**: 11A, supports medium current load.
8. **Technology**: SJ_Multi-EPI
- **Technology Type**: SJ_Multi-EPI technology, which enhances voltage tolerance and reduces on-resistance.
Domain and module applications：
Application Examples
The high voltage handling capability and moderate on-resistance of the FCD380N60E-VB MOSFET enable it to excel in multiple high voltage application scenarios. Here are a few typical application examples:
1. **Power Switching Circuit**:
- **Application**: The 650V maximum drain voltage of the FCD380N60E-VB makes it suitable for high voltage power switching circuits. For example, it can be used for switches in power adapters to stably control current and improve power efficiency.
2. **Inverters and Power Converters**:
- **Application**: In inverters and power converters, the FCD380N60E-VB can be used as a switching element for high voltage AC to DC conversion. Its high voltage capability and stability can meet the inverter's requirements for high voltage and high efficiency.
3. **High voltage protection circuit**:
- **Application**: In high voltage protection circuit, FCD380N60E-VB can be used to prevent circuit damage caused by excessive voltage. Its high voltage resistance can effectively protect other circuit components.
4. **Motor drive control**:
- **Application**: In motor drive control system, the high voltage tolerance and conduction performance of FCD380N60E-VB make it suitable for use as a switching element in high voltage motor drive circuit to control the start and operation of the motor.
5. **Electric vehicle power system**:
- **Application**: In the power system of electric vehicles, FCD380N60E-VB can be used for battery management and power conversion. Its high voltage tolerance and stable performance make it play an important role in the power system of electric vehicles.
The high voltage handling capability and good on-resistance of the FCD380N60E-VB MOSFET make it an excellent performer in high voltage applications such as power management, power conversion and protection circuits.
The high voltage handling capability and moderate on-resistance of the FCD380N60E-VB MOSFET enable it to excel in multiple high voltage application scenarios. Here are a few typical application examples:
1. **Power Switching Circuit**:
- **Application**: The 650V maximum drain voltage of the FCD380N60E-VB makes it suitable for high voltage power switching circuits. For example, it can be used for switches in power adapters to stably control current and improve power efficiency.
2. **Inverters and Power Converters**:
- **Application**: In inverters and power converters, the FCD380N60E-VB can be used as a switching element for high voltage AC to DC conversion. Its high voltage capability and stability can meet the inverter's requirements for high voltage and high efficiency.
3. **High voltage protection circuit**:
- **Application**: In high voltage protection circuit, FCD380N60E-VB can be used to prevent circuit damage caused by excessive voltage. Its high voltage resistance can effectively protect other circuit components.
4. **Motor drive control**:
- **Application**: In motor drive control system, the high voltage tolerance and conduction performance of FCD380N60E-VB make it suitable for use as a switching element in high voltage motor drive circuit to control the start and operation of the motor.
5. **Electric vehicle power system**:
- **Application**: In the power system of electric vehicles, FCD380N60E-VB can be used for battery management and power conversion. Its high voltage tolerance and stable performance make it play an important role in the power system of electric vehicles.
The high voltage handling capability and good on-resistance of the FCD380N60E-VB MOSFET make it an excellent performer in high voltage applications such as power management, power conversion and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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